Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications

IEEE Transactions on Magnetics

Volumn 49, Issue 7, 2013, Pages 4375-4378

  Zhang, Yue ^a,b   Zhao, Weisheng ^a,b   Prenat, Guillaume ^c   Devolder, Thibaut ^a,b   Klein, Jacques Olivier ^a,b   Chappert, Claude ^a,b   Dieny, Bernard ^c   Ravelosona, Dafine ^a,b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNRS   (France)

^c CEA GRENOBLE   (France)

Author keywords

Compact modeling; magnetic tunnel junction; nonvolatile; perpendicular magnetic anisotropy; stochastic behavior

Indexed keywords

COMPACT MODELING; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; PERPENDICULAR MAGNETIC ANISOTROPY; STOCHASTIC BEHAVIOR;

INTELLIGENT SYSTEMS; MAGNETIC ANISOTROPY; STOCHASTIC MODELS; STOCHASTIC SYSTEMS;

MAGNETIC DEVICES;

EID: 84880819802     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2242257     Document Type: Article

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