Quantification of interfacial state density (D it) at the high-k/III-V interface based on Hall effect measurements

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Veksler, D ^a   Nagaiah, P ^b   Chidambaram, T ^b   Cammarere, R ^b   Tokranov, V ^b   Yakimov, M ^b   Chen, Y T ^a   Huang, J ^a   Goel, N ^a   Oh, J ^a   Bersuker, G ^a   Hobbs, C ^a   Kirsch, P D ^a   Oktyabrsky, S ^b  

^a SEMATECH   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; DISORDERED INTERFACES; HALL CONCENTRATION; HALL EFFECT MEASUREMENT; HIGH ELECTRON MOBILITY; HIGH MOBILITY; HIGH-K DIELECTRIC; INTERFACE QUALITY; INTERFACIAL STATE; INTERFACIAL STATE DENSITY; LOW FREQUENCY; METAL OXIDE SEMICONDUCTOR; OXIDE/SEMICONDUCTOR INTERFACES;

HALL MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS);

INTERFACE STATES;

EID: 84866395116     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4749403     Document Type: Conference Paper

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