Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric

Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

  Shahrjerdi, D ^a,c   Nah, J ^a,c   Hekmatshoar, B ^b   Akyol, T ^a   Ramon, M ^a   Tutuc, E ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b Princeton University   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT MEASUREMENT; ENHANCEMENT-MODE; GAAS; HALL BARS; HALL MOBILITY MEASUREMENT; HIGH CARRIER MOBILITY; INVERSION CHARGE DENSITY; N-CHANNEL;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HALL MOBILITY; MESFET DEVICES; SEMICONDUCTING GALLIUM;

GALVANOMAGNETIC EFFECTS;

EID: 78649594386     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3521284     Document Type: Article

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