Ballistic InAs nanowire transistors

Nano Letters

Volumn 13, Issue 2, 2013, Pages 555-558

  Chuang, Steven ^a,d   Gao, Qun ^b   Kapadia, Rehan ^a,d   Ford, Alexandra C ^a,c,d   Guo, Jing ^b   Javey, Ali ^a,c,d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ballistic transport; mean free path; quantization; scattering; subbands; surface roughness

Indexed keywords

BALLISTIC LIMIT; BALLISTIC TRANSPORTS; CHANNEL LENGTH; FERMI'S GOLDEN RULE; INAS; INAS NANOWIRE; INAS NANOWIRES; LOW FIELD; MEAN FREE PATH; MEAN FREE PATH OF ELECTRONS; QUANTIZATION; ROOM TEMPERATURE; SUBBANDS; SURFACE ROUGHNESS SCATTERING; THEORETICAL CALCULATIONS;

INDIUM ARSENIDE; NANOWIRES; NUMERICAL METHODS; SCATTERING; SURFACE ROUGHNESS; SURFACE SCATTERING; TRANSPORT PROPERTIES;

BALLISTICS;

INDIUM; INDIUM ARSENIDE; NANOWIRE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

ARSENICALS; INDIUM; NANOWIRES; TEMPERATURE; TRANSISTORS, ELECTRONIC;

MLCS; MLOWN;

EID: 84873663522     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3040674     Document Type: Article

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