Measurement of carrier mobility in silicon nanowires

Nano Letters

Volumn 8, Issue 6, 2008, Pages 1566-1571

  Gunawan, Oki ^a   Sekaric, Lidija ^a   Majumdar, Amlan ^a   Rooks, Michael ^a   Appenzeller, Joerg ^a   Sleight, Jeffrey W ^a   Guha, Supratik ^a   Wilfried Haensch, ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICONS; INTRINSIC CHANNEL RESISTANCES; INTRINSIC CHANNELS; ROOM TEMPERATURES; SERIES RESISTANCES; SILICON NANOWIRES; SURFACE ORIENTATIONS; TOP-DOWN METHODS;

CAPACITANCE; CAPACITANCE MEASUREMENT; ELECTRIC WIRE; HOLE MOBILITY; MESFET DEVICES; MOSFET DEVICES; NANOWIRES; THERMAL EFFECTS;

FIELD EFFECT TRANSISTORS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRON TRANSPORT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRON TRANSPORT; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES; TRANSISTORS;

EID: 48449097261     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072646w     Document Type: Article

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