Theoretical study of the CiOi and IsiCiOi defects in Si

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 163-166

  Backlund, D J ^a   Estreicher, S K ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

C4 defect; Carbon; Oxygen; Self interstitial; Silicon; Theory

Indexed keywords

BINDING ENERGY; CHARGE TRAPPING; DEFECT STRUCTURES; INFRARED ABSORPTION; SILICON; VIBRATIONAL SPECTRA;

C4 DEFECT; CARBON-OXYGEN PAIR; SELF-INTERSTITIAL TRAPPING;

MOLECULAR DYNAMICS;

EID: 36148958980     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.137     Document Type: Article

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