Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 445, Issue , 2014, Pages 119-127

  Lagudu, Uma Rames Krishna ^a   Isono, Shintaro ^b   Krishnan, Sitaraman ^c   Babu, S V ^c  

^a CLARKSON UNIVERSITY   (United States)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c Wallace H Coulter School of Engineering   (United States)

Author keywords

Chemical mechanical polishing (CMP); Ionic strength; Silica particles; Silicon carbide; X ray photoelectron spectroscopy; Zeta potential

Indexed keywords

ABRASIVES; DISPERSIONS; IONIC STRENGTH; MICROELECTRONICS; PHOTOELECTRONS; SILICA; SILICON CARBIDE; SLURRIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZETA POTENTIAL;

ABRASIVE PARTICLES; CHEMICAL INERTNESS; CHEMICAL MECHANICAL POLISHING(CMP); ELECTROSTATIC REPULSION; MATERIAL REMOVAL RATE; POTASSIUM NITRATE; SILICA PARTICLES; SILICON CARBIDE THIN FILM;

CHEMICAL MECHANICAL POLISHING;

HYDROGEN PEROXIDE; POTASSIUM HYDROXIDE; POTASSIUM NITRATE; SILICON CARBIDE; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONTROLLED STUDY; DISPERSION; INFRARED SPECTROSCOPY; IONIC STRENGTH; MECHANICS; OXIDATION; PH; PRIORITY JOURNAL; SURFACE CHARGE; SURFACE PROPERTY; X RAY PHOTOELECTRON SPECTROSCOPY; ZETA POTENTIAL;

EID: 84893462223     PISSN: 09277757     EISSN: 18734359     Source Type: Journal    
DOI: 10.1016/j.colsurfa.2014.01.038     Document Type: Article

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