Electro-chemical mechanical polishing of silicon carbide

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 481-486

  Li, Canhua ^a   Bhat, Ishwara B ^a   Wang, Rongjun ^a   Seiler, Joseph ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Atomic force microscopy; Electro chemical mechanical polishing; Hydrogen etching; Silicon carbide

Indexed keywords

ALKALINITY; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CURRENT DENSITY; ETCHING; HYDROGEN; OXIDATION; SURFACE PHENOMENA;

CHEMICAL ETCHING; HYDROGEN ETCHING; SILICA SLURRIES;

SILICON CARBIDE;

EID: 2442666953     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0207-6     Document Type: Conference Paper

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