Fundamental investigation of chemical mechanical polishing of gaas in silica dispersions: Material removal and arsenic trihydride formation pathways

ECS Journal of Solid State Science and Technology

Volumn 2, Issue 11, 2013, Pages

  Matovu, J B ^a,b   Ong, P ^b   Leunissen, L H A ^b   Krishnan, Sitaraman ^a   Babua, S V ^a  

^a Clarkson University   (United States)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84887457116     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.008311jss     Document Type: Article

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