Amorphous silicon carbide heterojunction solar cells on p-type substrates

Thin Solid Films

Volumn 519, Issue 8, 2011, Pages 2550-2554

  Pysch, Damian ^a   Bivour, Martin ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Amorphous silicon; Amorphous silicon carbide; Heterojunction; Silicon; Solar cell

Indexed keywords

A-SI:H; A-SIC:H; AMORPHOUS SILICON LAYERS; BACK SURFACE FIELDS; CELL CURRENT; FILL FACTOR; GAS FLOWS; HETEROJUNCTION SOLAR CELLS; HIGH EFFICIENCY; INDIUM TIN OXIDE LAYERS; INTERMEDIATE LAYERS; N-DOPED; P-TYPE; P-TYPE SUBSTRATES; PASSIVATION LAYER; SILICON HETEROJUNCTIONS; SOLAR CELL EFFICIENCIES;

BORON; DOPING (ADDITIVES); HETEROJUNCTIONS; INDIUM COMPOUNDS; MORPHOLOGY; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS; SOLAR CELLS; SURFACE MORPHOLOGY; TIN; TIN OXIDES;

AMORPHOUS SILICON;

EID: 79551505057     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.028     Document Type: Article

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