Catalyst-referred etching of 4H-SiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide molecules

Surface and Interface Analysis

Volumn 40, Issue 6-7, 2008, Pages 998-1001

  Yagi, Keita ^a   Murata, Junji ^a   Kubota, Akihisa ^b   Sano, Yasuhisa ^a   Hara, Hideyuki ^a   Okamoto, Takeshi ^a   Arima, Kenta ^a   Mimura, Hidekazu ^a   Yamauchi, Kazuto ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Catalyst; Hydrogen peroxide; Hydroxyl radical; Planarization; Silicon carbide

Indexed keywords

HYDROGEN; HYDROGEN PEROXIDE; NONMETALS; OXIDATION; SILICON; SUBSTRATES;

ENVIRONMENTALLY-FRIENDLY; HYDROXYL RADICAL (OH); PLANARIZATION TECHNIQUE; SIC SUBSTRATES; SILICON CARBIDE (SIC) SUBSTRATES;

SILICON CARBIDE;

EID: 47749141109     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2804     Document Type: Conference Paper

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