Fabrication and characterization of copper oxide-silicon nanowire heterojunction photodiodes

Journal of Physics D: Applied Physics

Volumn 47, Issue 6, 2014, Pages

  Akgul, Guvenc ^a,b   Akgul, Funda Aksoy ^a,b   Mulazimoglu, Emre ^b   Unalan, Husnu Emrah ^b   Turan, Rasit ^b  

^a NIGDE UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

metal oxide semiconductors; photodiodes; silicon nanowires; thin films

Indexed keywords

FABRICATION AND CHARACTERIZATIONS; HETEROJUNCTION DEVICES; HETEROJUNCTION DIODES; HETEROJUNCTION PHOTODIODES; METAL OXIDE SEMICONDUCTOR; RECTIFICATION RATIO; SILICON NANOWIRES; VERTICALLY ALIGNED;

ELECTRIC PROPERTIES; FABRICATION; INTERFACES (MATERIALS); MOS DEVICES; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODIODES; SEMICONDUCTOR DIODES; SILICON; SOL-GEL PROCESS; THIN FILMS;

HETEROJUNCTIONS;

EID: 84893198104     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/6/065106     Document Type: Article

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