Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire photodiodes

IEEE Transactions on Nanotechnology

Volumn 11, Issue 1, 2012, Pages 127-133

  Hsueh, H T ^a,b   Chang, S J ^b   Weng, W Y ^b   Hsu, C L ^c   Hsueh, T J ^a   Hung, F Y ^b   Wu, S L ^d   Dai, B T ^a  

^a National Nano Devices Laboratories   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^d CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Low frequency noise characteristic; photodiode; ZnO nanowires

Indexed keywords

COAXIAL NANOWIRES; COPPER OXIDATION; LOW-FREQUENCY NOISE; WELL-ALIGNED; ZNO NANOWIRES;

COPPER; FABRICATION; PHOTODIODES; ZINC OXIDE;

NANOWIRES;

EID: 84862946989     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2159620     Document Type: Article

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