|
Volumn 66, Issue 1, 2012, Pages 110-112
|
Growth of silicon nanowires by electron beam evaporation using indium catalyst
|
Author keywords
Electron beam evaporation; In catalyst; Semiconductors; Si nanowires; Thin films; VLS growth mechanism
|
Indexed keywords
ALTERNATIVE CATALYSTS;
AS-GROWN;
AVERAGE LENGTH;
COMPOSITIONAL PROPERTIES;
DEPOSITION TIME;
E BEAM EVAPORATION;
ELECTRON BEAM EVAPORATION;
INDIUM CATALYST;
INDIUM NANOPARTICLES;
LOW SUBSTRATE TEMPERATURE;
MICROSCOPIC TECHNIQUES;
SI (100) SUBSTRATE;
SI NANOWIRE;
SI NANOWIRES;
SILICON NANOWIRES;
SINGLE-CRYSTALLINE;
TRANSMISSION ELECTRON MICROSCOPE;
VAPOR-LIQUID-SOLID GROWTH MECHANISM;
VLS GROWTH MECHANISM;
CATALYSTS;
ELECTRON BEAMS;
EVAPORATION;
GOLD DEPOSITS;
INDIUM;
PHASE TRANSITIONS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
NANOWIRES;
|
EID: 80052826111
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2011.08.064 Document Type: Article |
Times cited : (24)
|
References (21)
|