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Volumn 66, Issue 1, 2012, Pages 110-112

Growth of silicon nanowires by electron beam evaporation using indium catalyst

Author keywords

Electron beam evaporation; In catalyst; Semiconductors; Si nanowires; Thin films; VLS growth mechanism

Indexed keywords

ALTERNATIVE CATALYSTS; AS-GROWN; AVERAGE LENGTH; COMPOSITIONAL PROPERTIES; DEPOSITION TIME; E BEAM EVAPORATION; ELECTRON BEAM EVAPORATION; INDIUM CATALYST; INDIUM NANOPARTICLES; LOW SUBSTRATE TEMPERATURE; MICROSCOPIC TECHNIQUES; SI (100) SUBSTRATE; SI NANOWIRE; SI NANOWIRES; SILICON NANOWIRES; SINGLE-CRYSTALLINE; TRANSMISSION ELECTRON MICROSCOPE; VAPOR-LIQUID-SOLID GROWTH MECHANISM; VLS GROWTH MECHANISM;

EID: 80052826111     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.08.064     Document Type: Article
Times cited : (24)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.