P-Si nanowires/ SiO2 /n-ZnO heterojunction photodiodes

Applied Physics Letters

Volumn 97, Issue 1, 2010, Pages

  Huang, Chun Ying ^a   Yang, Ying Jay ^a   Chen, Ju Ying ^a   Wang, Chun Hsiung ^a   Chen, Yang Fang ^a   Hong, Lu Sheng ^b   Liu, Chie Sheng ^b   Wu, Chia Yin ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIXED CHARGES; HETEROJUNCTION DEVICES; HETEROJUNCTION PHOTODIODES; HOLE BLOCKING LAYERS; NANO SCALE; PHOTOGENERATED ELECTRONS; RESPONSIVITY; REVERSE BIAS; SILICON NANOWIRES; THIN LAYERS; ULTRA-THIN; WET-ETCHING PROCESS; ZNO;

CONVERSION EFFICIENCY; HETEROJUNCTIONS; PHOTODIODES; SILICON COMPOUNDS; ULTRATHIN FILMS; WET ETCHING; ZINC OXIDE;

SILICON OXIDES;

EID: 77954704412     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462319     Document Type: Article

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