Electronic properties of InP (001)/HfO2 (001) interface: Band offsets and oxygen dependence

Journal of Applied Physics

Volumn 115, Issue 2, 2014, Pages

  Kc, Santosh ^a   Dong, Hong ^a   Longo, Roberto C ^a   Wang, Weichao ^b   Xiong, Ka ^a   Wallace, Robert M ^a,c   Cho, Kyeongjae ^a,c  

^a The University of Texas at Dallas   (United States)

^b NANKAI UNIVERSITY   (China)

^c UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; DEFECT STATE; INTERFACIAL BONDING; INTERFACIAL GAP; MODEL INTERFACE; OXIDATION CONDITIONS; PHOSPHOROUS CONCENTRATIONS; SURFACE PASSIVATION;

ATOMIC LAYER DEPOSITION; CHEMICAL BONDS; DEPOSITION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HAFNIUM OXIDES;

INTERFACE STATES;

EID: 84892414853     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861177     Document Type: Article

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