Nitrogen passivation at GaAs:Al2O3 interfaces

Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

  Guo, Yuzheng ^a   Lin, Liang ^a   Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; HIGH DIELECTRIC CONSTANTS; II-IV SEMICONDUCTORS; INTERFACE SITES; NITROGEN PASSIVATIONS; VALENCE BAND EDGES;

CHEMICAL BONDS; DANGLING BONDS; ELECTRONEGATIVITY; GALLIUM ARSENIDE; PASSIVATION; SEMICONDUCTING GALLIUM;

NITROGEN;

EID: 84875133282     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794898     Document Type: Article

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