First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Gu, J J ^a   Liu, Y Q ^b   Wu, Y Q ^a   Colby, R ^a   Gordon, R G ^b   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D STRUCTURE; ATOMIC LAYER DEPOSITED; CHANNEL LENGTH; FIN WIDTHS; GATE PROCESS; GATE STACKS; GATE-ALL-AROUND; HIGH MOBILITY; MOSFETS; RELEASE PROCESS; SHORT-CHANNEL EFFECT; TOP-DOWN APPROACH;

ELECTRON DEVICES; FINS (HEAT EXCHANGE); GALLIUM; GALLIUM ALLOYS; INVERSION LAYERS; NANOWIRES; VANADIUM;

MOSFET DEVICES;

EID: 84863039889     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131662     Document Type: Conference Paper

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