Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Xiong, K ^a   Wang, W ^a   Zhernokletov, D M ^a   Santosh, K C ^a   Longo, R C ^a   Wallace, R M ^a,b   Cho, K ^a,b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GAP STATE; HIGH-QUALITY INTERFACE; INTERFACIAL BONDING; VALENCE BAND OFFSETS;

ELECTRONIC STRUCTURE; GALLIUM ALLOYS; HAFNIUM OXIDES; INTERFACES (MATERIALS);

INTERFACE STATES;

EID: 84872741620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775665     Document Type: Article

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