Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

Applied Physics Letters

Volumn 104, Issue 1, 2014, Pages

  Roy Chaudhuri, Ayan ^a   Fissel, A ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE LAYER; GROWTH PROCESS; HIGH DIELECTRIC CONSTANTS; ORIENTED GROWTH; QUANTUM CAPACITANCE; SI(100) SURFACE; SINGLE-CRYSTALLINE;

CAPACITANCE; MOLECULAR BEAM EPITAXY; PERMITTIVITY; THIN FILMS;

SILICON;

EID: 84892170100     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861470     Document Type: Article

References (35)

1. H. J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky, and A. Fissel, J. Cryst. Growth 278, 18 (2005). 10.1016/j.jcrysgro.2004.12.051
2. H. J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel, Phys. Status Solidi A 205, 695 (2008). 10.1002/pssa.200723509
3. Rare Earth Oxide Thin Films: Growth, Characterization and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, Heidelberg, 2007), Vol. 106.
4. H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, and H. Kurz, IEEE Electron Device Lett. 27, 814 (2006). 10.1109/LED.2006.882581
5. A. Laha, E. Bugiel, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 88, 172107 (2006). 10.1063/1.2198518
6. A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 90, 113508 (2007). 10.1063/1.2713142
7. W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012). 10.1063/1.4768295
8. W. Sitaputra and R. Tsu, J. Vac. Sci. Technol. A. 31, 021509 (2013). 10.1116/1.4793264
9. L. Li, C. Richter, S. Paetel, T. Kopp, J. Mannhart, and R. C. Ashoori, Science 332, 825 (2011). 10.1126/science.1204168
10. A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 89, 143514 (2006). 10.1063/1.2360209
11. A. Laha, A. Fissel, and H. J. Osten, Appl. Phys. Lett. 96, 072903 (2010). 10.1063/1.3318260
12. H. J. Müssig, J. Dabrowski, K. Ignatovich, J. P. Liu, V. Zavodinsky, and H. J. Osten, Surf. Sci. 504, 159 (2002). 10.1016/S0039-6028(01)01961-6
13. A. Fissel, J. Dabrowski, and H. J. Osten, J. Appl. Phys. 91, 8986 (2002). 10.1063/1.1471943
14. A. Fissel, H. J. Osten, and E. Bugiel, J. Vac. Sci. Technol. B. 21, 1765 (2003). 10.1116/1.1589516
15. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H. J. Osten, J. Appl. Phys. 99, 074105 (2006). 10.1063/1.2188051
16. C. R. Ashman, C. J. Först, K. Schwarz, and P. E. Blöch, Phys. Rev. B 70, 155330 (2004). 10.1103/PhysRevB.70.155330
17. C. J. Först, K. Schwarz, and P. E. Blöchl, Phys. Rev. Lett. 95, 137602 (2005). 10.1103/PhysRevLett.95.137602
18. C. R. Ashman, C. J. Först, K. Schwarz, and P. E. Blöch, Phys. Rev. B 69, 075309 (2004). 10.1103/PhysRevB.69.075309
19. Y. Jiang, J. B. Adams, and M. V. Schilfgaarde, J. Chem. Phys. 123, 064701 (2005). 10.1063/1.1949189
20. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998). 10.1103/PhysRevLett.81.3014
21. R. A. McKee, F. J. Walker, J. R. Conner, and E. D. Specht, Appl. Phys. Lett. 59, 782 (1991). 10.1063/1.105341
22. J. W. Reiner, A. M. Kolpak, Y. Segal, K. F. Garrity, S. Ismail-Beigi, C. H. Ahn, and F. J. Walker, Adv. Mater. 22, 2919 (2010). 10.1002/adma.200904306
23. D. O. Klenov, D. G. Schlom, H. Li, and S. Stemmer, Jpn. J. Appl. Phys., Part 2 44, L617 (2005). 10.1143/JJAP.44.L617
24. D. P. Norton, Mater. Sci. Eng. R 43, 139 (2004). 10.1016/j.mser.2003.12. 002
25. D. Schwendt, H. J. Osten, P. Shekhter, and M. Eizenberg, Appl. Phys. Lett. 100, 232905 (2012). 10.1063/1.4727893
26. A. Fissel, M. Czernohorsky, and H. J. Osten, Superlattices Microstruct. 40, 551 (2006). 10.1016/j.spmi.2006.07.002
27. D. ONeil, R. M. Bowman, and J. M. Gregg, Appl. Phys. Lett. 77, 1520 (2000). 10.1063/1.1290691
28. P. W. Tasker, J. Phys. C: Condens. Matter 12, 4977 (1979). 10.1088/0022-3719/12/22/036
29. S. Sonde, F. Giannazo, V. Raineri, and E. Rimini, J. Vac. Sci. Technol. B. 27, 868 (2009). 10.1116/1.3081890
30. S. V. Kravchenko, D. A. Rinberg, S. G. Semenchinsky, and V. M. Pudalov, Phys. Rev. B. 42, 3741 (1990). 10.1103/PhysRevB.42.3741
31. J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 68, 674 (1992). 10.1103/PhysRevLett.68.674
32. S. Shapira, U. Sivan, P. M. Solomon, E. Buchstab, M. Tischler, and G. B. Yoseph, Phys. Rev. Lett. 77, 3181 (1996) 10.1103/PhysRevLett.77.3181.
33. B. Skinner and B. I. Shklovskii, Phys. Rev. B. 82, 155111 (2010). 10.1103/PhysRevB.82.155111
34. G. Allison, Phys. Rev. Lett. 96, 216407 (2006). 10.1103/PhysRevLett.96. 216407
35. R. K. Schaeviz, J. E. Roth, S. Ren, O. Fidaner, and D. A. B. Miller, IEEE J. Sel. Top. Quantum Electron. 14, 1082 (2008). 10.1109/JSTQE.2008.918935