Material properties of Si-Ge/Ge quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 1082-1089

  Schaevitz, Rebecca K ^a   Roth, Jonathan E ^a   Ren, Shen ^a   Fidaner, Onur ^b   Miller, David A B ^a  

^a Stanford University   (United States)

^b PhotonIC Corporation   (United States)

Author keywords

Germanium (Ge); Optical interconnects; Quantum confined Stark effect (QCSE); Silicon (Si)

Indexed keywords

ELECTROABSORPTION MODULATORS; GERMANIUM; OPTICAL INTERCONNECTS; SEMICONDUCTOR QUANTUM WELLS; STARK EFFECT;

BAND NONPARABOLICITY; ELECTRO-ABSORPTION; FORBIDDEN TRANSITIONS; GERMANIUMS (GE); INTEGRATE OPTICS; QUANTUM-CONFINED STARK EFFECT; SILICON GERMANIUM; TUNNELING RESONANCES;

SI-GE ALLOYS;

EID: 48949099190     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.918935     Document Type: Article

References (31)

1. D. A. B. Miller, "Optical interconnects to silicon," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1312-1317, Nov./Dec. 2000.
2. D. A. B. Miller, "Rationale and challenges for optical interconnects to electronic chips," Proc. IEEE, vol. 88, no. 6, pp. 728-749, Jun. 2000.
3. D. A. B. Miller and H. M. Ozaktas, "Limit to the bit-rate capacity of electrical interconnects from the aspect ratio of the system architecture," J. Parallel Distrib. Comput., vol. 41, pp. 42-52, 1997.
4. H. Cho, P. Kapur, and K. C. Saraswat, "Power comparison between high-speed electrical and optical interconnects for interchip communication," J. Lightw. Technol., vol. 22, no. 9, pp. 2021-2033, Sep. 2004.
5. R. A. Soref, "Silicon-based optoelectronics," Proc. IEEE, vol. 81, no. 12, pp. 1687-1706, Dec. 1993.
6. A. Liu, R. Jones, L. Liao, D. Samara Rubio, D. Rublin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a mental-oxide-semiconductor capacitor," Nature, vol. 427, pp. 615-618, Feb. 2004.
7. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature, vol. 435, pp. 325-327, May 2005.
8. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2177, Nov. 1984.
9. U. Arad, E. Redmard, M. Shamay, A. Averboukh, S. Levit, and U. Efron, "Development of a large high-performance 2-D array of GaAs-AlGaAs multiple quantum-well modulators," IEEE Photon. Technol. Lett., vol. 15, no. 11, pp. 1531-1533, Nov. 2003.
10. H. Yaguchi, K. Tai, K. Takemasa, K. Onabe, R. Ito, and Y. Shiraki, "Characterization of Ge/SiGe strained-barrier quantum well structures using photoreflectance spectroscopy," Phys. Rev. B, vol. 49, no. 11, pp. 7394-7399, Mar. 1994.
11. x/Si type-I quantum wells," Appl. Phys. Lett., vol. 68, no. 15, pp. 2097-2099, Apr. 1996.
12. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, "Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators," IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 6, pp. 1503-1513, Nov./Dec. 2006.
13. Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, "Strong quantum-confined Stark effect in germanium quantum-well structures on silicon," Nature, vol. 437, pp. 1334-1336, Oct. 2005.
14. S. Tsujino, H. Sigg, G. Mussler, D. Chrastina, and H. von Känel, "Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells," Appl. Phys. Lett., vol. 89, no. 26, pp. 1-262119-3, Dec. 2006.
15. J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. B. Miller, "Optical modulator on silicon employing germanium quantum wells," Opt. Exp., vol. 15, no. 9, pp. 5851-5859, Apr. 2007.
16. J. E. Roth, O. Fidaner, E. E. Englund, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, "C-band side-entry Ge quantum well electroabsorption modulator on SOI operating at 1 volt swing," Electron. Lett., vol. 44, no. 1, pp. 49-50, Jan. 2008.
17. O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, "Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared," IEEE Photon. Tech. Lett., vol. 19, no. 17-20, pp. 1631-1633, Sep./Oct. 2007.
18. K. Yamanaka, T. Fukunaga, N. Tsukada, K. L. I. Kobayashi, and M. Ishii, "Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface," Appl. Phys. Lett., vol. 48, no. 13, pp. 840-842, Mar. 1986.
19. R. Braunstein, A. R. Moore, and F. Herman, "Intrinsic optical absorption in germanium-silicon alloys," Phys. Rev., vol. 109, no. 3, pp. 695-710, Feb. 1958.
20. W. C. Dash and R. Newman, "Intrinsic optical absorption in single-crystal germanium and silicon at 77 K and 300 K," Phys. Rev., vol. 99, no. 4, pp. 1151-1155, Aug. 1955.
21. 0 transitions in silicon," Solid State Commun., vol. 11, pp. 1375-1378, 1972.
22. C. Tserbak, H. M. Polatoglou, and G. Theodorou, "Unified approach to the electronic structure of strained Si/Ge superlattices," Phys. Rev. B, vol. 47, no. 12, pp. 7104-7124, Mar. 1993.
23. S. H. Groves, C. R. Pidgeon, and J. Feinleib, "Infrared magnetoelectroreflectance in Ge, GaSb, and InSb," Phys. Rev. Lett., vol. 17, no. 12, pp. 643-646, Sep. 1966.
24. R. N. Dexter, H. J. Zeiger, and B. Lax, "Cyclotron resonance experiments in silicon and germanium," Phys. Rev., vol. 104, no. 3, pp. 637-644, Nov. 1956.
25. M. Cardona and F. H. Pollak, "Energy-band structure of germanium and silicon: The kp method," Phys. Rev., vol. 142, no. 2, pp. 530-543, Feb. 1966.
26. H. D. Barber, "Effective mass and intrinsic concentration in silicon," Solid-State Electron., vol. 10, no. 11, pp. 1039-1051, 1967.
27. C. M. Engelhardt, D. Tobben, M. Aschauer, F. Schaffler, G. Abstreiter, and E. Gornik, "High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance," Solid-State Electron., vol. 37, no. 4-6, pp. 949-952, 1994.
28. z (001)," Semicond. Sci. Technol., vol. 15, no. 6, pp. 565-572, Jun. 2000.
29. E. O. Kane, "Band structure of indium antimonide," J. Phys. Chem. Solids, vol. 1, pp. 249-261, 1957.
30. U. Ekenberg, "Nonparabolicity effects in a quantum well: Sublevel shift, parallel mass, and Landau levels," Phys. Rev. B, vol. 40, no. 11, pp. 7714-7726, Oct. 1989.
31. y substrates," Phys. Rev. B, vol. 48, no. 19, pp. 14276-14287, Nov. 1993.