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Applied Physics Letters

Volumn 96, Issue 7, 2010, Pages

Effect of Ge passivation on interfacial properties of crystalline Gd 2 O3 thin films grown on Si substrates

(3) Laha, Apurba a Fissel, A a Osten, H J a

a LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL PROPERTY; EPITAXIAL QUALITY; FIXED CHARGES; INTERFACE TRAPS; INTERFACIAL PROPERTY; SI SUBSTRATES; SI SURFACES; SIGNIFICANT IMPACTS;

CAPACITANCE; CHEMISORPTION; CRYSTALLINE MATERIALS; GADOLINIUM; GERMANIUM; MONOLAYERS; PASSIVATION; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77249101651 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3318260 Document Type: Article

Times cited : (14)

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