Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Applied Physics Letters

Volumn 101, Issue 22, 2012, Pages

  Sitaputra, W ^a   Tsu, R ^a,b  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GADOLINIUM OXIDE; INDUCED MOBILITY; MOBILITY ENHANCEMENT; P-TYPE SI; ROOM TEMPERATURE; SI(1 0 0); TRANSFER-DOPING; TWO-DIMENSIONAL CONFINEMENT;

CHARGE TRANSFER; MOLECULAR BEAM EPITAXY; SILICON; SILICON WAFERS;

GADOLINIUM;

EID: 84870567871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768295     Document Type: Article

References (26)

1. M. Badylevich, S. Shamuilia, V. V. Afanasev, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 90 (25), 252101-252103 (2007). 10.1063/1.2746419
2. G. Niu, Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon (Ecole Centrale de Lyon 2010-10-20, 2010).
3. J. Robertson and K. Xiong, Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, 2007), Vol. 106, pp. 313-329.
4. D. P. Norton, Mater. Sci. Eng. R 43 (5-6), 139-247 (2004). 10.1016/j.mser.2003.12.002
5. H. J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel, Phys. Status Solidi A 205 (4), 695-707 (2008). 10.1002/pssa.200723509
6. H. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, and A. Fissel, Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, Berlin, 2007), Vol. 106, pp. 101-114.
7. J. X. Wang, A. Laha, A. Fissel, D. Schwendt, R. Dargis, T. Watahiki, R. Shayduk, W. Braun, T. M. Liu, and H. J. Osten, Semicond. Sci. Technol. 24 (4), 045021 (2009). 10.1088/0268-1242/24/4/045021
8. A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, and H. J. Osten, Thin Solid Films 518 (9), 2546-2550 (2010). 10.1016/j.tsf.2009.09.139
9. H. D. B. Gottlob, T. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M. C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H. J. Osten, and H. Kurz, IEEE Electron Device Lett. 27 (10), 814-816 (2006). 10.1109/LED.2006.882581
10. P. W. Tasker, J. Phys. C 12 (22), 4977 (1979). 10.1088/0022-3719/12/22/ 036
11. R. W. Fathauer and L. J. Schowalter, Appl. Phys. Lett. 45 (5), 519-521 (1984). 10.1063/1.95299
12. J. Conesa, Surf. Sci. 339 (3), 337-352 (1995). 10.1016/0039-6028(95) 00595-1
13. J. Robertson, Solid-State Electron. 49 (3), 283-293 (2005). 10.1016/j.sse.2004.11.011
14. D. O. Klenov, D. G. Schlom, H. Li, and S. Stemmer, Jpn. J. Appl. Phys., Part 2 44 (20-23), L617-L619 (2005). 10.1143/JJAP.44.L617
15. A. Brinkman, M. Huijben, M. van Zalk, J. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, and H. Hilgenkamp, Nature Mater. 6 (7), 493-496 (2007). 10.1038/nmat1931
16. A. Ohtomo and H. Y. Hwang, Nature 427 (6973), 423-426 (2004). 10.1038/nature02308
17. R. Pentcheva and W. E. Pickett, Phys. Rev. B 74 (3), 035112 (2006). 10.1103/PhysRevB.74.035112
18. C. D. Wirkus, M. F. Berard, and D. R. Wilder, J. Am. Ceram. Soc. 52 (8), 456 (1969). 10.1111/j.1151-2916.1969.tb11981.x
19. K. Tse, D. Liu, K. Xiong, and J. Robertson, Microelectron. Eng. 84 (9-10), 2028-2031 (2007). 10.1016/j.mee.2007.04.020
20. M. V. Ganduglia-Pirovano, A. Hofmann, and J. Sauer, Surf. Sci. Rep. 62 (6), 219-270 (2007). 10.1016/j.surfrep.2007.03.002
21. G. Pacchioni, ChemPhysChem 4 (10), 1041-1047 (2003). 10.1002/cphc. 200300835
22. T. Ami, Y. Ishida, N. Nagasawa, A. Machida, and M. Suzuki, Appl. Phys. Lett. 78 (10), 1361-1363 (2001). 10.1063/1.1351849
23. T. Ami and M. Suzuki, Mater. Sci. Eng., B 54 (1-2), 84-91 (1998). 10.1016/S0921-5107(98)00133-0
24. ICDD-PDF4 (03-065-3181), International Centre for Data Diffraction, 2010.
25. M. Basletic, J. L. Maurice, C. Carrétéro, G. Herranz, O. Copie, M. Bibes, E. Jacquet, K. Bouzehouane, S. Fusil, and A. Barthélémy, Nature Mater. 7 (8), 621-625 (2008). 10.1038/nmat2223
26. J. M. Larson and J. P. Snyder, IEEE Transactions on Electron Devices 53 (5), 1048-1058 (2006) 10.1109/TED.2006.871842.