Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Schwendt, D ^a   Osten, H J ^a   Shekhter, P ^b   Eizenberg, M ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BULK VALUE; CUBIC LATTICE; DIELECTRIC LAYER; ENHANCEMENT EFFECTS; EPITAXIAL RARE EARTH OXIDE; K-VALUES; OXIDE COMPOSITIONS; PHASE DEFORMATION; RARE EARTH OXIDE; SI (1 1 1); STRAIN-INDUCED EFFECTS; TETRAGONAL DISTORTION; THICKNESS DEPENDENCE;

EPITAXIAL GROWTH; GADOLINIUM; RARE EARTHS;

SILICON;

EID: 84862125610     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4727893     Document Type: Article

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