Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 2, 2013, Pages

  Sitaputra, Wattaka ^a   Tsu, Raphael ^a,b  

^a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY POINT; ENERGY REDUCTION; MOBILITY ENHANCEMENT; P-TYPE SI; SI(1 0 0); SILICON SUBSTRATES; SUBSTRATE DOPING; XRD;

GADOLINIUM; INTERFACES (MATERIALS);

SILICON;

EID: 84874628759     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4793264     Document Type: Article

References (20)

1. M. Badylevich, S. Shamuilia, V. V. Afanas'ev, A. Stesmans, A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 90, 252101 (2007). 10.1063/1.2746419 (Pubitemid 47158103)
2. D. P. Norton, Mater. Sci. Eng. R 43, 139 (2004). 10.1016/j.mser.2003.12. 002
3. G. Niu, Epitaxy of Crystalline Oxides for Functional Materials Integration on Silicon (Ecole Centrale de Lyon, Écully, France, 2010).
4. J. Robertson and K. Xiong, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, New York, 2007), pp. 313-329.
5. H. D. B. Gottlob, IEEE Electron Devices Lett. 27, 814 (2006). 10.1109/LED.2006.882581
6. A. Fissel, R. Dargis, E. Bugiel, D. Schwendt, T. Wietler, J. Krügener, A. Laha, and H. J. Osten, Thin Solid Films 518, 2546 (2010). 10.1016/j.tsf.2009.09.139
7. K. N. Delfrey, Rare Earths: Research and Applications (Nova Science, Hauppauge, New York, 2008).
8. H. J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel, Phys. Status Solidi A 205, 695 (2008). 10.1002/pssa.200723509
9. H. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, and A. Fissel, in Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, edited by, M. Fanciulli, and, G. Scarel, (Springer, Berlin, 2007), pp. 101-114.
10. J. Conesa, Surf. Sci. 339, 337 (1995). 10.1016/0039-6028(95)00595-1
11. R. W. Fathauer and L. J. Schowalter, Appl. Phys. Lett. 45, 519 (1984). 10.1063/1.95299 (Pubitemid 14651640)
12. W. Sitaputra and R. Tsu, Appl. Phys. Lett. 101, 222903 (2012). 10.1063/1.4768295
13. K. Tse, D. Liu, K. Xiong, and J. Robertson, Microelectron. Eng. 84, 2028 (2007). 10.1016/j.mee.2007.04.020 (Pubitemid 46776944)
14. M. V. Ganduglia-Pirovano, A. Hofmann, and J. Sauer, Surf. Sci. Rep. 62, 219 (2007). 10.1016/j.surfrep.2007.03.002
15. G. Pacchioni, ChemPhysChem 4, 1041 (2003). 10.1002/cphc.200300835
16. T. Ami, Y. Ishida, N. Nagasawa, A. Machida, and M. Suzuki, Appl. Phys. Lett. 78, 1361 (2001). 10.1063/1.1351849
17. T. Ami and M. Suzuki, Mater. Sci. Eng. B 54, 84 (1998). 10.1016/S0921-5107(98)00133-0
18. J. Robertson, Eur. Phys. J.-Appl. Phys. 28, 265 (2004). 10.1051/epjap:2004206 (Pubitemid 40002196)
19. G. Jacek, F. Fabio, and N. Claudine, Rep. Prog. Phys. 71, 016501 (2008). 10.1088/0034-4885/71/1/016501
20. D. A. W. Soares and C. A. Pimentel, J. Appl. Crystallogr. 16, 486 (1983). 10.1107/S0021889883010870