Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)

Applied Physics Letters

Volumn 103, Issue 24, 2013, Pages

  Tokarczyk, M ^a   Kowalski, G ^a   Mozdzonek, M ^b   Borysiuk, J ^a,c   Stepniewski R ^a   Strupinski W ^b   Ciepielewski, P ^b   Baranowski, J M ^a,b  

^a UNIVERSITY OF WARSAW   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COVALENT BONDING; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; INTERLAYER SPACINGS; MOLECULAR HYDROGEN; MULTILAYER GRAPHENE; NEGATIVELY CHARGED; STRUCTURAL INVESTIGATION;

ATOMS; EPITAXIAL GROWTH; HYDROGEN; HYDROGENATION; SILICON CARBIDE;

GRAPHENE;

EID: 84890458132     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4848815     Document Type: Article

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