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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 577-580

Graphene growth on C and Si-face of 4H-SiC- TEM and AFM studies

(4) Borysiuk, J a,b Bozek, R b Strupinski W a Baranowski, J M a,b

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b UNIVERSITY OF WARSAW (Poland)

Author keywords

Atomic force microscopy; Epitaxial graphene; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

AFM STUDIES; DISTANCE-DIFFERENCE; EPITAXIAL GRAPHENE; GRAPHENE GROWTH; GRAPHENE LAYERS; HIGH-RESOLUTION TEM; PROLONGED ANNEALING; SIC SUBSTRATES;

GRAPHENE;

EID: 77955450517 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.577 Document Type: Conference Paper

Times cited : (5)

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