Growth rate and thickness uniformity of epitaxial graphene

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 569-572

  Strupinski, W ^a   Drabinska, A ^b   Bozek, R ^b   Borysiuk, J ^a,b   Wysmolek, A ^b   Stepniewski, R ^b   Kosciewicz, K ^a   Caban, P ^a   Korona, K ^b   Grodecki, K ^a,b   Geslin, Pierre Antoine ^c   Baranowski, J M ^a,b  

^a Research Group of Integrated Circuits and System Design   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c ECOLE DES MINES DE SAINT ETIENNE   (France)

Author keywords

Epitaxy; Graphene; Growth parameters; Mechanism; Uniformity

Indexed keywords

EPITAXIAL GROWTH; GRAPHENE; MECHANISMS; SILICON CARBIDE; SUBSTRATES;

EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GROWTH PARAMETERS; REACTOR PRESSURES; SIC SUBSTRATES; THICKNESS UNIFORMITY; UNIFORMITY;

GROWTH RATE;

EID: 77955450905     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.569     Document Type: Conference Paper

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