CVD growth of graphene stacks on 4H-SiC (0001) surface - X-ray diffraction and raman spectroscopy study

Acta Physica Polonica A

Volumn 124, Issue 5, 2013, Pages 768-771

  Tokarczyk, M ^a   Kowalski, G ^a   Grodecki, K ^a,b   Urban, J ^a   Strupinski W ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; CVD-GROWTH OF GRAPHENE; FEW-LAYER GRAPHENE; GROWTH TIME; INDEPENDENT CHANNELS; INTERLAYER SPACINGS; ISLAND DISTRIBUTIONS; SAMPLE SURFACE;

CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; X RAY DIFFRACTION;

GRAPHENE;

EID: 84887908779     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.124.768     Document Type: Article

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