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Volumn 740-742, Issue , 2013, Pages 113-116

Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)

(10) Giannazzo, F a Deretzis, I a La Magna, A a Franco, S Di a Piluso, N b Fiorenza, P a Roccaforte, F a Schmid, P c Lerch, W c Yakimova, R d

a CNR IMM (Italy)

b ETC srl (Italy)

c Centrotherm thermal solutions GmbH Co KG (Germany)

d LINKÖPING UNIVERSITY (Sweden)

Author keywords

Electronic transport; Graphene; SiC

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRANSFER; MONOLAYERS; QUANTUM THEORY; SILICON CARBIDE; SUBSTRATES;

CHARGE TRANSFER PHENOMENA; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRON WAVEFUNCTIONS; ELECTRONIC CONDUCTANCE; ELECTRONIC TRANSPORT; QUANTUM MECHANICAL EFFECTS; RESISTANCE INCREASE; TWO-DIMENSIONAL MAP;

GRAPHENE;

EID: 84874085972 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.740-742.113 Document Type: Conference Paper

Times cited : (2)

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