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Volumn 11, Issue 4, 2011, Pages 1786-1791

Graphene epitaxy by chemical vapor deposition on SiC

Author keywords

carbon deposition; CVD; epitaxy; Graphene; SiC; sublimation

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; CARBON DEPOSITION; COMPRESSIVE STRAIN; CONTROLLED SYNTHESIS; CVD; DOPING LEVELS; ELECTRONIC ENERGIES; EPITAXIAL GRAPHENE; EPITAXY; FUTURE APPLICATIONS; GRAPHENE GROWTH; GRAPHENE LAYERS; HIGH ELECTRON MOBILITY; HIGH QUALITY; ON-WAFER; SIC; SIC SUBSTRATES; TRANSPORT MEASUREMENTS;

EID: 79954512426     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200390e     Document Type: Article
Times cited : (317)

References (48)
  • 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.