High performance InAs/In0.53Ga0.23Al 0.24As/InP quantum dot 1.55 μ tunnel injection laser

IEEE Journal of Quantum Electronics

Volumn 50, Issue 1, 2014, Pages 7-14

  Bhowmick, Sishir ^a   Baten, Md Zunaid ^a   Frost, Thomas ^a   Ooi, Boon S ^b   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

differential gain; molecular beam epitaxy; Quantum dot laser; small signal characteristics; tunnel injection

Indexed keywords

DIFFERENTIAL GAIN; EDGE-EMITTING SEMICONDUCTOR; GAIN COMPRESSION FACTOR; LIGHT CURRENT CHARACTERISTICS; SMALL SIGNAL MODULATION; SMALL-SIGNAL CHARACTERISTICS; TEMPERATURE-DEPENDENT MEASUREMENTS; TUNNEL INJECTION;

EPITAXIAL GROWTH; MODULATION; MOLECULAR BEAM EPITAXY; QUANTUM DOT LASERS; SEMICONDUCTOR DOPING;

CHIRP MODULATION;

EID: 84889646788     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2013.2290943     Document Type: Article

References (43)

1. U. Koren, B. I. Miller, Y. K. Su, T. L. Koch, and J. E. Bowers, "Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser," Appl. Phys. Lett., vol. 51, no. 21, pp. 1744-1746, 1987.
2. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. Van Dongen, "High-performance 1.5 μm wavelength InGaAs- InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, no. 6, pp. 1426-1439, Jun. 1991. (Pubitemid 21690661)
3. B. I. Miller, U. Koren, M. G. Young, and M. D. Chien, "Straincompensated strained-layer superlattices for 1.5 μm wavelength lasers," Appl. Phys. Lett., vol. 58, no. 18, pp. 1952-1954, 1991.
4. S. J. Caracci, M. R. Krames, N. Holonyak, M. J. Ludowise, and A. Fischer-Colbrie, "Long wavelength (γ ∼ 1.5 μm) native oxide defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes," J. Appl. Phys., vol. 75, no. 5, pp. 2706-2708, 1994.
5. X. Zhu, D. T. Cassidy, M. J. Hamp, D. A. Thompson, B. J. Robinson, Q. C. Zhao, et al., "1.4 μm InGaAsP-InP strained multiple-quantumwell laser for broad-wavelength tunability," IEEE Photon. Technol. Lett., vol. 9, no. 9, pp. 1202-1204, Sep. 1997. (Pubitemid 127563989)
6. D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, et al., "Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers," IEEE Photon. Technol. Lett., vol. 7, no. 11, pp. 1225-1227, Nov. 1995.
7. P. Bhattacharya, J. Singh, H. Yoon, X. Zhang, A. Gutierrez-Aitken, and Y. Lam, "Tunneling injection lasers: A new class of lasers with reduced hot carrier effects," J. Quantum Electron., vol. 32, no. 9, pp. 1620-1629, 1996.
8. D. Klotzkin, K.-C. Syao, P. Bhattacharya, C. Caneau, and R. Bhat, "Modulation characteristics of high speed (f-3dB = 20 GHz) tunneling injection InP/InGaAsP 1.55 μm ridge waveguide lasers extracted from optical and electrical measurements," J. Lightw. Technol., vol. 15, no. 11, pp. 2141-2146, 1997.
9. V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Y. Egorov, A. V. Lunev, et al., "InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm," Appl. Phys. Lett., vol. 74, no. 19, pp. 2815-2817, 1999. (Pubitemid 129307106)
10. O. B. Shchekin and D. G. Deppe, "Low-threshold high-T0 1.3 μm InAs quantum-dot lasers due to p-type modulation doping of the active region," IEEE Photon. Technol. Lett., vol. 14, no. 9, pp. 1231-1233, Sep. 2002.
11. P. K. Kondratko, S. L. Chuang, G. Walter, T. Chung, and N. Holonyak, "Observations of near-zero linewidth enhancement factor in a quantumwell coupled quantum-dot laser," Appl. Phys. Lett., vol. 83, no. 23, pp. 4818-4820, 2003.
12. S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, et al., "The role of Auger recombination in the temperature-dependent output characteristics (T0 = ∞) of p-doped 1.3 μm quantum dot lasers," Appl. Phys. Lett., vol. 85, no. 22, pp. 5164-5166, 2004. (Pubitemid 40043517)
13. S. Fathpour, Z. Mi, and P. Bhattacharya, "High-speed quantum dot lasers," J. Phys. D, Appl. Phys., vol. 38, no. 13, pp. 2103-2111, 2005. (Pubitemid 40872093)
14. Z. Mi, P. Bhattacharya, and S. Fathpour, "High-speed 1.3 μm tunnel injection quantum-dot lasers," Appl. Phys. Lett., vol. 86, no. 15, pp. 153109-1-153109-3, 2005.
15. Y. Tanaka, K. Takada, M. Ishida, Y. Nakata, T. Yamamoto, M. Yamaguchi, et al., "High-speed modulation in 1.3 μm InAs/GaAs highdensity quantum dot lasers," in Proc. Asia Commun. Photon. Conf. Exhibit., Dec. 2010, pp. 577-578.
16. L. Gonzalez, J. M. Garcia, R. Garcia, F. Briones, J. Martinez-Pastor, and C. Ballesteros, "Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures," Appl. Phys. Lett., vol. 76, no. 9, pp. 1104-1106, 2000.
17. R. H. Wang, A. Stintz, P. M. Varangis, T. C. Newell, H. Li, K. J. Malloy, et al., "Room-temperature operation of InAs quantum-dash lasers on InP [001]," IEEE Photon. Technol. Lett., vol. 13, no. 8, pp. 767-769, Aug. 2001. (Pubitemid 32720152)
18. H. Dery and G. Eisenstein, "Self-consistent rate equations of selfassembly quantum wire lasers," IEEE J. Quantum Electron., vol. 40, no. 10, pp. 1398-1409, Oct. 2004.
19. M. Gioannini, "Investigation of p-type doping effect on the gain characteristics of quantum dash semiconductor lasers," Proc. SPIE, vol. 5452, pp. 526-533, Sep. 2004. (Pubitemid 40123077)
20. P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, et al., "High-gain and low-threshold InAs quantum-dot lasers on InP," Appl. Phys. Lett., vol. 87, no. 24, pp. 243107-1-243107-3, 2005.
21. J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, et al., "InP based lasers and optical amplifiers with wire- /dot-like active regions," J. Phys. D, Appl. Phys., vol. 38, no. 13, pp. 2088-2102, 2005. (Pubitemid 40872092)
22. D. Hadass, V. Mikhelashvili, G. Eisenstein, A. Somers, S. Deubert, W. Kaiser, et al., "Time-resolved chirp in an InAs/InP quantum-dash optical amplifier operating with 10 Gbit/s data," Appl. Phys. Lett., vol. 87, no. 2, pp. 021104-1-021104-3, 2005.
23. J. H. Wei and K. S. Chan, "A theoretical analysis of quantum dash structures," J. Appl. Phys., vol. 97, no. 12, pp. 123524-1-123524-12, 2005.
24. I. P. Marko, S. J. Sweeney, A. R. Adams, S. R. Jin, B. N. Murdin, R. Schwertberger, et al., "Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure," Phys. Status Solidi B, vol. 241, no. 14, pp. 3427-3431, 2004. (Pubitemid 40004389)
25. F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, F. Pommereau, and A. Accard, "Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core," IEEE Photon. Technol. Lett., vol. 17, no. 7, pp. 1369-1371, Jul. 2005. (Pubitemid 41158398)
26. Z. Mi and P. Bhattacharya, "DC and dynamic characteristics of p-doped and tunnel injection 1.65 μm InAs quantum-dash lasers grown on InP (001)," IEEE J. Quantum Electron., vol. 42, no. 12, pp. 1224-1232, Nov. 2006. (Pubitemid 44811664)
27. C. Gilfert, E.-M. Pavelescu, and J. P. Reithmaier, "Influence of the As2/As4 growth modes on the formation of quantum dot like InAs islands grown on InAlGaAs/InP (100)," Appl. Phys. Lett., vol. 96, no. 19, pp. 191903-1-191903-3, May 2010.
28. S. G. Li, Q. Gong, Y. F. Lao, Y. G. Zhang, S. L. Feng, and H. L. Wang, "InAs/InP(100) quantum dot laser with high wavelength stability," Electron. Lett., vol. 46, no. 2, pp. 158-159, 2010.
29. D. K. Oh, J. S. Kim, J. H. Lee, S. U. Hong, C. W. Lee, W. S. Han, et al., "The progress of QD laser in the near IR wavelength region," Proc. SPIE, vol. 7945, pp. 79450D-1-79450D-7, Jan. 2011.
30. C. Gilfert, V. Ivanov, N. Oehl, M. Yacob, and J. P. Reithmaier, "High gain 1.55 μm diode lasers based on InAs quantum dot like active regions," Appl. Phys. Lett., vol. 98, no. 20, pp. 201102-1-201102-3, 2011.
31. X. Zhang, A. Gutierrez-Aitken, D. Klotzkin, P. Bhattacharya, C. Caneau, and R. Bhat, " 0.98-μm multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 2, pp. 309-314, Apr. 1997. (Pubitemid 127559714)
32. Z. Y. Zhang, A. E. H. Oehler, B. Resan, S. Kurmulis, K. J. Zhou, Q. Wang, et al., "1.55 μm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser," Sci Rep., vol. 2, p. 477, Jun. 2012.
33. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs doubleheterostructure injection lasers," J. Appl. Phys., vol. 46, pp. 1299-1306, Mar. 1975.
34. V. Sichkovskyi, V. Ivanov, and J. P. Reithmaier, "High modal gain 1.5 μm InP based quantum dot lasers: Dependence of static properties on the active layer design," Proc. SPIE, vol. 8640, pp. 864004-1-864004-6, Mar. 2013.
35. N. A. Jahan, C. Hermannstädter, J. H. Huh, H. Sasakura, and T. J. Rotter, "Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates," J. Appl. Phys., vol. 113, no. 3, pp. 033506-1-033506-11, 2013.
36. ITU-T G.694.1, International Telecommunication Union, Geneva, Switzerland, 2002.
37. P. J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma, J. J. M. Binsma, and T. van Dongen, "High-performance 1.5 μm wavelength InGaAs- InGaAsP strained quantum well lasers and amplifiers," IEEE J. Quantum Electron., vol. 27, no. 6, pp. 1426-1439, Jun. 1991. (Pubitemid 21690661)
38. Y. Suematsu and S. Arai, "Single-mode semiconductor lasers for longwavelength optical fiber communications and dynamics of semiconductor lasers," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1436-1449, Nov./Dec. 2000. (Pubitemid 32255365)
39. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, no. 12, pp. 1527-1529, Dec. 1999. (Pubitemid 30527945)
40. Y. Miyake and M. Asada, "Spectral characteristics of linewidth enhancement factor ? of multidimensional quantum wells," J. Appl. Phys., vol. 28, pp. 1280-1281, May 1989.
41. P. J. A. Thijs, T. Dongen, L. F. Tiemeijer, and J. J. M. Binsma, "Highperformance γ = 1.3 μm InGaAsP-InP strained-layer quantum well lasers," J. Lightw. Technol., vol. 12, no. 1, pp. 28-37, Jan. 1994.
42. L. V. Asryan and S. Luryi, "Tunneling-injection quantum-dot laser: Ultrahigh temperature stability," IEEE J. Quantum Electron., vol. 37, no. 7, pp. 905-910, Jul. 2001. (Pubitemid 32644605)
43. D.-S. Han and L. V. Asryan, "Output power of a double tunnelinginjection quantum dot laser," Nanotechnology, vol. 21, no. 1, pp. 015201- 1-015201-14, Jan. 2010.