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Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

Influence of the As2 / As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

(3) Gilfert, C a Pavelescu, E M b Reithmaier, J P a

a UNIVERSITY OF KASSEL (Germany)

b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BASIC CONCEPTS; FORMATION PROCESS; GROWTH MODES; INALGAAS; INAS; INAS ISLAND; INP; LATTICE-MATCHED; LOW TEMPERATURES; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DASHES; QUANTUM DOT; QUANTUM DOTS; SHAPE TRANSITIONS;

ARSENIC; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING INDIUM;

EID: 77952962288 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3428956 Document Type: Article

Times cited : (62)

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