1.4-μm InGaAsp-InP strained multiple-quantum-well laser for broad-wavelength tunability

IEEE Photonics Technology Letters

Volumn 9, Issue 9, 1997, Pages 1202-1204

  Zhu, Xiang ^a   Cassidy, Daniel T ^a   Hamp, Michael J ^a   Thompson, D A ^a   Robinson, B J ^a   Zhao, Q C ^a   Davies, M ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

External cavity; Laser tuning; Optical amplifiers; Quantum well lasers

Indexed keywords

DIFFRACTION GRATINGS; LASER RESONATORS; LASER TUNING; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; STRAIN;

RIDGE WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0031235974     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.618477     Document Type: Article

References (13)

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