1.55 μm InAs/GaAs quantum dots and high repetition rate quantum dot SESAM mode-locked laser

Scientific Reports

Volumn 2, Issue , 2012, Pages

  Zhang, Z Y ^a   Oehler, A E H ^b   Resan, B ^b   Kurmulis, S ^b   Zhou, K J ^a   Wang, Q ^a   Mangold, M ^c   Suedmeyer T ^c   Keller, U ^c   Weingarten, K J ^b   Hogg, R A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Oclaro Technology Ltd Inc   (United Kingdom)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84863491327     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00477     Document Type: Article

References (31)

1. Arakawa, Y. & Sakaki, H. Multidimensional quantum well laser and temperaturedependence of its threshold current. Appl Phys Lett 40, 939-941 (1982).
2. Deppe, D. G., Shavritranuruk, K., Ozgur, G., Chen, H & Freisem, S. Quantumdot laser diode with low threshold and low internal loss. Electron. Lett. 45, 54-55 (2009).
3. Rafailov, E. U., Cataluna, M. A. & Sibbett, W. Mode-locked quantum-dot lasers. Nature Photon 1, 395-401 (2007).
4. Wu, J. et al. Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy. Nano Letters 10, 1512-1516 (2010).
5. Keller, U. Recent developments in compact ultrafast lasers. Nature 424, 831-838 (2003 (Pubitemid 37021718)
6. Zhang, Z. Y., Hogg, R. A., Lv, X. Q. & Wang, Z. G. Self-assembled quantum-dot superluminescent light-emitting diodes. Adv. Opt. Photon 2, 201-228 (2010).
7. Sugawara, M. & Usami, M. Quantum dot devices handling the heat. Nature Photon 3, 30-31 (2009).
8. Borri, P., Schneider, S., Langbein,W. & Bimberg, D. Ultrafast carrier dynamics in InGaAs quantum dot materials and devices. J ournal ofOptics A-Pure and Applied Optics 8, S33-S46 (2006).
9. Maas, D. J. H. C. et al. Vertical integration of ultrafast semicondcutor lasers. Appl. Phys. B 88, 493-497 (2007). (Pubitemid 47401957)
10. Herda, R. et al. Semiconductor quantum-dot saturable absorber mode-locked fiber laser. IEEE Photonics Technology Letters 18, 157-159 (2006). (Pubitemid 46542522)
11. Schlatter, A. et al. Nearly quantum-noise-limited timing jitter from miniature Er:Yb:glass lasers. Opt. Lett. 30,1536-1538 (2005). (Pubitemid 40866890)
12. Sudmeyer, T. et al. Femtosecond laser oscillators for high-field science. Nature Photon 2, 599-604 (2008).
13. Hillerkuss, D. et al. 26 Tbits/s line-rate super-channel transmission utilizing alloptical fast Fourier transform processing. Nature Photon 5, 364-371 (2011).
14. Bakopoulos, P. et al.Multi-wavelength laser source for dense wavelength division multiplexing networks. Proceedings of Optical Fiber Communications Conference, paper OWJ2 (2007).
15. Bartels, A., Heinecke, D. & Diddams, S. A. 10-GHz self-referenced optical frequency comb. Science 326, 681-682 (2009).
16. Oehler, A. E. H., Suedmeyer, T.,Weingarten, K. J. & Keller, U. 100 GHz passively mode-locked Er:Yb:glass laser at 1.5 mm with 1.6-ps pulses Opt. Express 16, 21930-21935 (2008).
17. Maas, D. J. H. C. et al. Growth parameter optimization for fast quantum dot SESAMs. Opt. Express 16, 18646-18656 (2008).
18. Wang, F. et al. Wideband-tuneable, nanotube, mode-locked, fibre laser. Nature Nanotech 3, 738-742 (2008).
19. Mikhrin, V. S. et al. InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4-1.8mm. Semiconductors 40, 342-345 (2006).
20. Seravalli, L., Frigeri, P., Trevisi, G. & Franchi, S. 1.59 mu m room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates. Appl Phys Lett 92, 213104 (2008).
21. Richter, M., Damilano, B., Massies, J., Duboz, J. Y. & Wieck, A. D. InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 mu m laser applications. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications 891, 185-190 (2006).
22. Ripalda, J. M. et al. Room temperature emission at 1.6 mu m from InGaAs quantum dots capped with GaAsSb. Appl Phys Lett 87, 202108 (2005).
23. Ledentsov, N. N. et al. High performance quantum dot lasers on GaAs substrates operating in 1.5 mu m range. Electron. Lett 39, 1126-1128 (2003).
24. Sopanen, M., Xin, H. P. & Tu, C. W. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 mu m emission on GaAs. Appl Phys Lett 76, 994-996 (2000).
25. Liu, H. Y. et al. Improved performance of 1.3 mummultilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Appl Phys Lett 85, 704-706 (2004).
26. Wang, Z. M., Holmes, K., Mazur, Y. I. & Salamo, G. J. Fabrication of (In,Ga)As quantum-dot chains on GaAs (100). Appl Phys Lett 84, 1931-1933 (2004).
27. Springholz, G., Holy, V., Pinczolits, M. & Bauer, G. Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant. Science 282, 734-737 (1998). (Pubitemid 28489383)
28. Ebiko, Y. et al. Island size scaling in InAs/GaAs self-assembled quantum dots. Physical Review Letters 80, 2650-2653 (1998). (Pubitemid 128621633)
29. Chu, L., Arzberger, M., Bohm, G. & Abstreiter, G. Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots. Journal of Applied Physics 85, 2355-2362 (1999). (Pubitemid 129615268)
30. Maas, D. J. H. C. et al. High precision optical characterization of semiconductor saturable absorber mirrors. Opt. Express 16, 7571-7579 (2008). (Pubitemid 351697442)
31. Krainer, L. et al. Tunable picosecond pulse generating-laser with a repetition rate exceeding 10 GHz. Electron. Lett. 38, 225-227 (2002). (Pubitemid 34221180)