High gain 1.55 mu;m diode lasers based on InAs quantum dot like active regions

Applied Physics Letters

Volumn 98, Issue 20, 2011, Pages

  Gilfert, C ^a   Ivanov, V ^a   Oehl, N ^a   Yacob, M ^a   Reithmaier, J P ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CIRCULAR SHAPE; DIODE LASERS; GAIN MATERIALS; HIGH GAIN; INAS QUANTUM DOTS; INP; MODAL GAIN; NANO SCALE; NANOSPECIES; QUANTUM DASHES;

INDIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 79957577287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3590727     Document Type: Article

References (17)

1. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, IEEE Photon. Technol. Lett. 1041-1135 14, 735 (2002). 10.1109/LPT.2002.1003076 (Pubitemid 34732055)
2. J. Brault, M. Gendry, G. Grenet, G. Hollinger, J. Olivares, B. Salem, T. Benyattou, and G. Bremond, J. Appl. Phys. 0021-8979 92, 506 (2002). 10.1063/1.1481959 (Pubitemid 34783346)
3. J. S. Kim, J. H. Lee, S. U. Hong, W. S. Han, H. -S. Kwack, and D. K. Oh, Appl. Phys. Lett. 0003-6951 83, 3785 (2003). 10.1063/1.1623947
4. Y. Yang, B. Jo, J. Kim, C. -R. Lee, J. S. Kim, D. K. Oh, J. S. Kim, and J. -Y. Leem, J. Appl. Phys. 0021-8979 105, 053510 (2009). 10.1063/1.3039086
5. H. Saito, K. Nishi, A. Kamei, and S. Sugou, IEEE Photon. Technol. Lett. 1041-1135 12, 1298 (2000). 10.1109/68.883809
6. D. Bimberg, J. Phys. D: Appl. Phys. 0022-3727 38, 2055 (2005). 10.1088/0022-3727/38/13/001 (Pubitemid 40872089)
7. S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, IEEE J. Quantum Electron. 0018-9197 40, 1423 (2004). 10.1109/JQE.2004.834779
8. C. Gilfert, E. -M. Pavelescu, and J. P. Reithmaier, Appl. Phys. Lett. 0003-6951 96, 191903 (2010). 10.1063/1.3428956
9. R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, J. Cryst. Growth 0022-0248 251, 248 (2003). 10.1016/S0022-0248(02)02371-0
10. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 0003-6951 78, 267 (2001). 10.1063/1.1339846 (Pubitemid 33731949)
11. A. Martinez, K. Merghem, and S. Bouchoule, Appl. Phys. Lett. 0003-6951 93, 021101 (2008). 10.1063/1.2957479
12. K. Merghem, A. Akrout, A. Martinez, G. Aubin, A. Ramdane, F. Lelarge, and G. -H. Duan, Appl. Phys. Lett. 0003-6951 94, 021107 (2009). 10.1063/1.3070544
13. F. Klopf, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 0003-6951 77, 1419 (2000). 10.1063/1.1290601
14. P. Caroff, C. Paranthoen, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labb́, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, Appl. Phys. Lett. 0003-6951 87, 243107 (2005). 10.1063/1.2146063 (Pubitemid 41780856)
15. F. Schäfer, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 0003-6951 74, 2915 (1999). 10.1063/1.123964
16. F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 0003-6951 81, 217 (2002). 10.1063/1.1491612 (Pubitemid 34802999)
17. E. -M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín- Mínguez, and I. Esquivias, Semicond. Sci. Technol. 0268-1242 23, 085022 (2008). 10.1088/0268-1242/23/8/085022