Fringe field effect on electrical characteristics of pentacene thin-film transistors

Japanese Journal of Applied Physics

Volumn 52, Issue 11 PART 1, 2013, Pages

  Park, Jaehoon ^a   Zhang, Xue ^a   Bae, Moo Ho ^a   Park, Gyeong Tae ^b   Bae, Jin Hyuk ^b  

^a Hallym University   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FRINGE-FIELD EFFECTS; OPERATING CHARACTERISTICS; OPERATING FREQUENCY; OUTPUT CURRENT; PENTACENE THIN-FILM TRANSISTORS; SOURCE AND DRAIN ELECTRODES;

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; THIN FILM TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84889022050     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.111602     Document Type: Article

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