Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Park, Jaehoon ^a   Jeong, Ye Sul ^a   Park, Kun Sik ^a   Do, Lee Mi ^a   Bae, Jin Hyuk ^b   Sun Choi, Jong ^c   Pearson, Christopher ^d   Petty, Michael ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b ECOLE DES MINES DE SAINT ETIENNE   (France)

^c Hong Ik University   (South Korea)

^d DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FLAT-BAND VOLTAGE; GATE VOLTAGES; HYSTERETIC BEHAVIOUR; METAL INSULATOR SEMICONDUCTOR CAPACITORS; PENTACENE FET; PENTACENE FILM; PENTACENES; POLYCRYSTALLINE; POLYCRYSTALLINE PENTACENE; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD REGION; SWITCHING OPERATIONS; TRAP STATE;

FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; HYSTERESIS; MIS DEVICES;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84862150948     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721676     Document Type: Conference Paper

References (35)

1. B. Crone, A. Dodabalapur, Y. Y. Lin, R. W. Filas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, Nature (London) 403, 521 (2000). 10.1038/35000530
2. T. Yamao, H. Akagami, Y. Nishimoto, S. Hotta, and Y. Yoshida, J. Nanosci. Nanotechnol. 9, 6271 (2009). 10.1166/jnn.2009.1360
3. J.-H. Kwon, S.-I. Shin, J. Choi, M.-H. Chung, T.-Y. Oh, K.-H. Kim, D. H. Choi, and B.-K. Ju, J. Nanosci. Nanotechnol. 10, 3198 (2010). 10.1166/jnn.2010.2244
4. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997). 10.1109/55.644085
5. J. H. Park, C. H. Kang, Y. J. Kim, Y. S. Lee, and J. S. Choi, Mater. Sci. Eng., C 24, 27 (2004). 10.1016/j.msec.2003.09.064
6. A. Bolognesi, M. Berliocchi, M. Manenti, A. D. Carlo, P. Lugli, K. Lmimouni, and C. Dufour, IEEE Trans. Electron Devices 51, 1997 (2004). 10.1109/TED.2004.838333
7. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2003). 10.1063/1.1525068
8. S. Y. Yang, K. Shin, and C. E. Park, Adv. Funct. Mater. 15, 1806 (2005). 10.1002/adfm.200400486
9. O. Marinov, M. J. Deen, and B. Iiguez, J. Vac. Sci. Technol. B 24, 1728 (2006). 10.1116/1.2209992
10. J. E. McDermott, M. McDowell, I. G. Hill, J. Hwang, A. Kahn, S. L. Bernasek, and J. Schwartz, J. Phys. Chem. A 111, 12333 (2007). 10.1021/jp075177v
11. H. Ma, O. Acton, G. Ting, J. W. Ka, H.-L. Yip, N. Tucker, R. Schofield, and A. K.-Y. Jen, Appl. Phys. Lett. 92, 113303 (2008). 10.1063/1.2857502
12. M. F. Calhoun, J. Sanchez, D. Olaya, M. E. Gershenson, and V. Podzorov, Nature Mater. 7, 84 (2008). 10.1038/nmat2059
13. T. Umeda, D. Kumaki, and S. Tokito, J. Appl. Phys. 105, 024516 (2009). 10.1063/1.3072669
14. I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Trans. Electron Devices 48, 1060 (2001). 10.1109/16.925226
15. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. 14, 99 (2002). 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9
16. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997). 10.1109/16.605476
17. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, Appl. Phys. Lett. 81, 268 (2002). 10.1063/1.1491009
18. D. H. Kim, D. Y. Lee, H. S. Lee, W. H. Lee, Y. H. Kim, J. I. Han, and K. Cho, Adv. Mater. 19, 678 (2007). 10.1002/adma.200601259
19. A. Virkar, S. Mannsfeld, J. H. oh, M. F. Toney, Y. H. Tan, G.-Y. Liu, C. Scott, R. Miller, and Z. Bao, Adv. Funct. Mater. 19, 1962 (2009). 10.1002/adfm.200801727
20. J.-H. Bae, W.-H. Kim, H. Kim, C. Lee, and S.-D. Lee, J. Appl. Phys. 102, 063508 (2007). 10.1063/1.2780869
21. J. Park, J. H. Bae, W. H. Kim, S. D. Lee, J. S. Gwag, and D. W. Kim, Solid-State Electron. 54, 1650 (2009). 10.1016/j.sse.2010.08.004
22. F. J. Meyer zu Heringdorf, M. C. Reuter, and R. M. Tromp, Nature (London) 412, 517 (2001). 10.1038/35087532
23. D. P. Norton, Solid-State Electron. 47, 801 (2003). 10.1016/S0038- 1101(02)00340-4
24. J. W. P. Wu, Mater. Today 8, 32 (2005). 10.1016/S1369-7021(05)71274-8
25. C. H. Kim, O. Yaghmazadeh, D. Tondelier, Y. B. Jeong, Y. Bonnassieux, and G. Horowitz, J. Appl. Phys. 109, 083710 (2011). 10.1063/1.3574661
26. A. Sleiman, M. C. Rosamond, M. A. Martin, A. Ayesh, A. A. Ghaferi, A. J. Gallant, M. F. Marbrook, and D. A. Zeze, Appl. Phys. Lett. 100, 023302 (2012). 10.1063/1.3675856
27. J. Park, B. J. Park, H. J. Choi, Y. Kim, and J. S. Choi, IEEE Electron Device Lett. 30, 1146 (2009). 10.1109/LED.2009.2031256
28. A. D. Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, and H. Maresch, Appl. Phys. Lett. 86, 263501 (2005). 10.1063/1.1954901
29. S. H. Jin, K. D. Jung, H. Shin, B.-G. Park, and J. D. Lee, Synth. Met. 156, 196 (2006). 10.1016/j.synthmet.2005.11.012
30. Y.-W. Wang, H.-L. Cheng, Y.-K. Wang, T.-H. Hu, J.-C. Ho, C.-C. Lee, T.-F. Lei, and C.-F. Yeh, Thin Solid Films 467, 215 (2004). 10.1016/j.tsf.2004.04.001
31. T. Li, J. W. Balk, P. P. Ruden, I. H. Campbell, and D. J. Smith, J. Appl. Phys. 91, 4312 (2002). 10.1063/1.1453509
32. D. Guo, T. Miyadera, S. Ikeda, T. Shimada, and K. Saiki, J. Appl. Phys. 102, 023706 (2007). 10.1063/1.2753671
33. C. D. Dimitrakopoulos, I. Kymissis, S. Purushothaman, D. A. Neumayer, P. R. Duncombe, and R. B. Laibowitz, Adv. Mater. 11, 1372 (1999). 10.1002/(SICI)1521-4095(199911)11:16<1372::AID-ADMA1372>3.0.CO;2-V
34. T. Miyadera, T. Minari, S. D. Wang, and K. Tsukagoshi, Appl. Phys. Lett. 93, 213302 (2008). 10.1063/1.3037213
35. W.-H. Kim, J.-H. Bae, M.-H. Kim, C.-M. Keum, J. Park, and S.-D. Lee, J. Appl. Phys. 109, 024508 (2011). 10.1063/1.3544308