High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

Materials Science and Engineering C

Volumn 28, Issue 5-6, 2008, Pages 1010-1013

  Zaghdoudi, M ^a,b   Rogel, R ^b   Alzaied, N ^c   Fathallah, M ^c   Mohammed Brahim, T ^b  

^a UNIVERSITY OF TUNIS   (Tunisia)

^b UNIVERSITÉ DE RENNES 1   (France)

^c KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Mobility; Polysilicon; SPC; TFTs

Indexed keywords

CHEMICAL STABILITY; DEFECTS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; PHOSPHORUS; POLYSILICON; SILANES;

ACTIVE LAYERS; FIELD EFFECT MOBILITY; PHOSPHORUS ATOMS; TEMPERATURE CHANGE;

THIN FILM TRANSISTORS;

EID: 43049114239     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2007.10.087     Document Type: Article

References (9)

1. Yuki M., Masumo K., and Kunigita M. IEEE Trans. Electron Devices 36 (1989) 1934-1937
2. Batra S., Maddox R., Tran L., Manning M., Dennison C., and Fazan P. IEEE Trans. Electron Devices 40 (1993) 2125
3. Clark M.G. IEE Proc., Circ. Devices Syst. 141 (1994) 3
4. Zaghdoudi M., Abdelkrim M.M., Fathallah M., Mohammed-Brahim T., and Rogel R. Mater. Sci. Eng., C, Biomim. Mater., Sens. Syst. 26 (2006) 177
5. Angelis C.T., Dimitriadis C.A., Farmakis F.V., Brini J., Kamarinos G., and Miyasaka M. Appl. Phys. Lett. 76 (2000) 2442
6. Young N.D., Gill A., and Clarence I.R. J. Appl. Phys. 66 (1989) 187
7. Hofmann K., Werner C., Weber W., and Dorda G. IEEE Trans. Electron Devices ED-32 (1985) 691
8. Young N.D., and Ayres J.R. IEEE Trans. Electron Devices ED-42 (1995) 1623
9. Di Maria D.J., Buchanan D.A., Stathis J.H., and Stahlbush R.E. J. Appl. Phys. 77 (1995) 2032