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Japanese Journal of Applied Physics

Volumn 51, Issue 9 PART3, 2012, Pages

Schottky barrier height and s-parameter of Ti, Cu, Pd, and Pt contacts on p-Type GaN

(3) Park, Youngjun a Ahn, Kwang Soon b Kim, Hyunsoo a

a Chonbuk National University (South Korea)

b Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER INHOMOGENEITIES; IDEALITY FACTORS; P-TYPE GAN; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENCE; THERMIONIC FIELD EMISSION;

GALLIUM NITRIDE; PLATINUM; SCATTERING PARAMETERS; THERMIONIC EMISSION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84867712584 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.09MK01 Document Type: Conference Paper

Times cited : (12)

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