Strain-induced back channel electron mobility enhancement in polycrystalline silicon thin-film transistors fabricatedby continuous-wave laser lateral crystallization

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Fujii, Shuntaro ^a   Kuroki, Shin Ichiro ^a   Kotani, Koji ^a   Ito, Takashi ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; BACK GATES; BIAS CONDITIONS; CONTINUOUS WAVES; CONTROL GATES; EFFECTIVE ELECTRON MOBILITY; EFFECTIVE MOBILITIES; INVERSION LAYER; MOBILITY ENHANCEMENT; POLY-SI TFTS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; VARIABLE THRESHOLDS;

CRYSTALLIZATION; ELECTRON MOBILITY; POLYSILICON; THIN FILM TRANSISTORS;

TENSILE STRAIN;

EID: 79955380832     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DH10     Document Type: Article

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