1/f noise of silicon nanowire BioFETs

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 615-617

  Rajan, Nitin K ^a   Routenberg, David A ^a   Chen, Jin ^a   Reed, Mark A ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

Etching; Low frequency noise (LFN); MOSFET; Nanowire (NW)

Indexed keywords

1/F NOISE; BIOLOGICAL FIELDS; ETCHING METHOD; GATE STACKS; HOOGE PARAMETERS; LOW-FREQUENCY NOISE; LOWER NOISE; MOS-FET; MOSFETS; SILICON NANOWIRES; SUBMICROMETERS; SUBTHRESHOLD SWING;

ETCHING; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; ORDINARY DIFFERENTIAL EQUATIONS; THERMAL NOISE;

NANOWIRES;

EID: 77953026396     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2047000     Document Type: Article

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