Low frequency noise analysis in advanced CMOS devices

Advanced Materials Research

Volumn 324, Issue , 2011, Pages 441-444

  Jomaah, Jalal ^a,b   Fadlallah, Majida ^a   Ghibaudo, Gélrard ^b  

^a LEBANESE UNIVERSITY   (Lebanon)

^b IMEP LAHC   (France)

Author keywords

CMOS; Double gate; FinFet; Hooge mobility fluctuations; Low frequency noise; MOS transistors; Number carrier fluctuations; SOI

Indexed keywords

CMOS; DOUBLE-GATE; FINFET; HOOGE MOBILITY FLUCTUATIONS; LOW-FREQUENCY NOISE; NUMBER CARRIER FLUCTUATIONS; SOI;

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; THERMAL NOISE;

CARRIER MOBILITY;

EID: 80053010551     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.324.441     Document Type: Conference Paper

References (12)

1. L. Zafari et al. Solid State Electronics, vol.51, no2, (2007), 292-295.
2. K. Hung, et al. IEEE Trans Electron Devices, 37, (1990), 654.
3. G. Ghibaudo et al. Phys. Stat. Sol. (a), 124, (1991), 571.
4. A. McWhorter, in "SC Surf. Phys.", Univ. of Pennsylvania Press, Philadelphia, (1957), 207.
5. S. Christensson et al. Sol State Electron, 11, (1968), 797.
6. F. Hooge, Physica, 83B, (1976), 14.
7. R. Jindal et al. J. Appl. Phys., 52, (1981), 2884.
8. C.M. Van Vliet, Proc. ICNF (1990), 128.
9. I.M. Hafez et al. Sol. State Electron, 33, (1990), 1525.
10. A. Cros et al. Tech. Dig. - Int. Electron Devices Meet. (2006), 234.
11. L. Zafari et al. J. Vac. Sci. Technol. A 27 (1), (2009), 402-405.
12. L. Zafari, et al. Fluctuation and Noise Letters, 8, (2008), L99.