Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 433-435

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Floating body effects; Lorentzian; Noise measurement; Noise model; Silicon on insulator (SOI) technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

BACK GATE BIAS; LORENTZIAN NOISE;

MOSFET DEVICES;

EID: 2942726533     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.828961     Document Type: Letter

References (14)

1. E. Simoen, U. Magnusson, A. L. P. Rotondaro, and C. Claeys, "The kink-related excess low-frequency noise in silicon-on-insulator MOSTs," IEEE Trans. Electron Devices, vol. 41, pp. 330-339, Mar. 1994.
2. E. Simoen and C. Claeys, "The low-frequency noise behavior of silicon-on-insulator technologies," Solid State Electron., vol. 39, pp. 949-960, July 1996.
3. W. Jin, P. C. H. Chan, S. K. H. Fung, and P. K. Ko, "Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFETs," IEEE Trans. Electron Devices, vol. 46, pp. 1180-1185, June 1999.
4. G. O. Workman and J. G. Fossum, "Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum," IEEE Trans. Electron Devices, vol. 47, pp. 1192-1200, June 2000.
5. Y.-C. Tseng, W. M. Huang, M. Mendicino, D. J. Monk, P. J. Welch, and J. C. S. Woo, "Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device optimization for RF ICs," IEEE Trans. Electron Devices, vol. 48, pp. 1428-1437, July 2001.
6. V. Dessard, B. Iňíguez, S. Adriaensen, and D. Flandre, "SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C," IEEE Trans. Electron Devices, vol. 49, pp. 1289-1295, July 2002.
7. F. Dieudonné, J. Jomaah, and F. Balestra, "Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs," IEEE Electron Device Lett., vol. 23, pp. 737-739, Dec. 2002.
8. A. Mercha, E. Simoen, H. van Meer, and C. Claeys, "Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 82, pp. 1790-1792, Mar. 2003.
9. N. B. Lukyanchikova, M. V. Petrichuk, N. P. Garbar, A. Mercha, E. Simoen, and C. Claeys, "Electron valence band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 94, pp. 4461-4469, Oct. 2003.
10. A. Mercha, J. M. Raff, E. Simoen, E. Augendre, and C. Claeys, "'Linear kink effect' induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs," IEEE Trans. Electron Devices, vol. 50, pp. 1675-1682, July 2003.
11. F. Dieudonné, O. Rozeau, J. Jomaah, and F. Balestra, "Direct gate tunneling related excess noise in ultrathin gate oxide partially depleted SOI MOSFETs," in Proc. ULIS 2003 4th Eur. Workshop Ultimate Integration Silicon, 2003, pp. 81-84.
12. E. Simoen, A. Mercha, J. M. Rafí, C. Claeys, N. Lukyanchikova, and N. Garbar, "Explaining the parameters of the electron valence band tunneling-related Lorentzian noise in fully depleted SOI MOSFETs," IEEE Electron Device Lett., vol. 24, pp. 751-754, Dec. 2003.
13. N. Lukyanchikova, N. Garbar, A. Smolanka, E. Simoen, A. Mercha, and C. Claeys, "Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially-depleted SOI MOSFETs," Solid State Electron., vol. 48, pp. 747-758, 2004.
14. E. Simoen, A. Mercha, J. M. Rafi, C. Claeys, N. B. Lukyanchikova, and N. Garbar, "High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 95, pp. 4084-4092, Apr. 2004.