Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

Journal of Applied Physics

Volumn 113, Issue 12, 2013, Pages

  Pud, S ^a   Li, J ^a   Petrychuk, M ^b   Feste, S ^a   Vitusevich, S ^a   Danilchenko, B ^c   Offenhausser A ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTIVITY; CONDUCTING CHANNELS; FIELD EFFECT TRANSISTOR (FETS); MODULATION EFFECTS; MODULATION PHENOMENA; NOISE SPECTROSCOPY; RADIATION TREATMENTS; SENSOR APPLICATIONS;

FIELD EFFECT TRANSISTORS; GAMMA RAYS; GATE DIELECTRICS; INFORMATION TECHNOLOGY; NANOWIRES; TRANSPORT PROPERTIES;

MODULATION;

EID: 84875762706     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795603     Document Type: Article

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