Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Lokshin, M ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATE; DRAIN CURRENT; LINEAR KINK EFFECT (LKE); SPECTRAL DENSITY;

BAND STRUCTURE; COUPLED CIRCUITS; ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; LEAKAGE CURRENTS; THRESHOLD ELEMENTS;

MOS DEVICES;

EID: 29144437780     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2138380     Document Type: Article

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