Large initial compressive stress in top-down fabricated silicon nanowires evidenced by static buckling

Journal of Micromechanics and Microengineering

Volumn 23, Issue 1, 2013, Pages

  Allain, P E ^a   Le Roux, X ^a   Parrain, F ^a   Bosseboeuf, A ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION STRESS; DIE ATTACHMENT; HIGH TEMPERATURE; SILICON NANOWIRES; SINGLE CRYSTAL SILICON; STATIC BUCKLING; THERMAL TRANSPORT; THERMO-MECHANICAL STRESS;

ASPECT RATIO; COMPRESSIVE STRESS; FABRICATION; NANOWIRES; SILICON;

SILICON WAFERS;

EID: 84877962999     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/23/1/015014     Document Type: Article

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