메뉴 건너뛰기




Volumn 3, Issue , 2013, Pages

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84887777234     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep03201     Document Type: Article
Times cited : (41)

References (42)
  • 1
    • 0028385147 scopus 로고
    • Candela-class high-brightness InGaN/ AlGaN double-heterostructure blue-light-emitting diodes
    • Nakamura, S., Muai, T. & Senoh, M. Candela-class high-brightness InGaN/ AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett 64, 1687-1689 (1994).
    • (1994) Appl. Phys. Lett , vol.64 , pp. 1687-1689
    • Nakamura, S.1    Muai, T.2    Senoh, M.3
  • 2
    • 0029779805 scopus 로고    scopus 로고
    • InGaN-based multi-quantum-well-structure laser diodes
    • Nakamura, S. et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. Jpn. J. Appl. Phys 35, L74-L76 (1996).
    • (1996) Jpn. J. Appl. Phys , vol.35
    • Nakamura, S.1
  • 3
    • 76749139916 scopus 로고    scopus 로고
    • Properties of the state of the art of bulk III-V nitride substrates and homoepitaxial layers
    • Freitas, J. A. Properties of the state of the art of bulk III-V nitride substrates and homoepitaxial layers. J. Phys. D: Appl. Phys. 43, 073001-073013 (2010).
    • (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 073001-073013
    • Freitas J., .A.1
  • 4
    • 84870536413 scopus 로고    scopus 로고
    • Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
    • Cich,M. J. et al. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density. Appl. Phys. Lett 101, 22509-22511 (2012).
    • (2012) Appl. Phys. Lett , vol.101 , pp. 22509-22511
    • Cich, M.J.1
  • 5
    • 84874985280 scopus 로고    scopus 로고
    • Properties of MOCVD GaN/AlGaN heterostructres Grown on polar and nonpolar bulk GaN substrates
    • Rudzinski, M., Kudrawiec, R., Kucharski, R., Dwilinski, R. & Strupinski, W. Properties of MOCVD GaN/AlGaN heterostructres Grown on polar and nonpolar bulk GaN substrates. Phys. Stat. Sol. (c) 10, 302-305 (2013).
    • (2013) Phys. Stat. Sol. (C) , vol.10 , pp. 302-305
    • Rudzinski, M.1    Kudrawiec, R.2    Kucharski, R.3    Dwilinski, R.4    Strupinski, W.5
  • 6
    • 84861748072 scopus 로고    scopus 로고
    • GaN based nanorods for solid state lighting
    • Li, S. & Waag, A. GaN based nanorods for solid state lighting. J. Appl. Phys 111, 071101-071123 (2012).
    • (2012) J. Appl. Phys , vol.111 , pp. 071101-071123
    • Li, S.1    Waag, A.2
  • 7
    • 77953638679 scopus 로고    scopus 로고
    • Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
    • Ramesh, V., Kiuchi, A., Kishino, K., Funato, M. & Kawakami, Y. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well. J. Appl. Phys 107, 114303-111408 (2010).
    • (2010) J. Appl. Phys , vol.107 , pp. 114303-111408
    • Ramesh, V.1    Kiuchi, A.2    Kishino, K.3    Funato, M.4    Kawakami, Y.5
  • 8
    • 84856091912 scopus 로고    scopus 로고
    • Semipolar GaN grown on foreign substrates: A review
    • Scholz, F. Semipolar GaN grown on foreign substrates: a review. Semicond. Sci. technol 27, 024002-024016 (2012).
    • (2012) Semicond. Sci. Technol , vol.27 , pp. 024002-024016
    • Scholz, F.1
  • 9
    • 84856113833 scopus 로고    scopus 로고
    • Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on atterned sapphire substrates
    • OIkada, N. & Tadatomo, K. Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on atterned sapphire substrates. Semicond. Sci. Technol 27, 024003 (2012).
    • (2012) Semicond. Sci. Technol , vol.27 , pp. 024003
    • Oikada, N.1    Tadatomo, K.2
  • 10
    • 84862534603 scopus 로고    scopus 로고
    • High-power, low-efficiency droop semipolar(20-2-1) singlequantum well blue light emitting diodes
    • Pan, C. et al. High-power, low-efficiency droop semipolar(20-2-1) singlequantum well blue light emitting diodes. Appl. Phys. Express 5, 082103-082105 (2012).
    • (2012) Appl. Phys. Express , vol.5 , pp. 082103-082105
    • Pan, C.1
  • 11
    • 0037197433 scopus 로고    scopus 로고
    • Substrates for gallium nitride epitaxy
    • Liu, L. & Edgar, J. H. Substrates for gallium nitride epitaxy. Mater. Sci. Eng. R 37, 61-127 (2002).
    • (2002) Mater. Sci. Eng. R , vol.37 , pp. 61-127
    • Liu, L.1    Edgar, J.H.2
  • 12
    • 0038269509 scopus 로고    scopus 로고
    • Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
    • Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G. & Erikson, H. I. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition. Appl. Phys. Lett 70, 420-422 (1997). (Pubitemid 127663652)
    • (1997) Applied Physics Letters , vol.70 , Issue.4 , pp. 420-422
    • Rosner, S.J.1    Carr, E.C.2    Ludowise, M.J.3    Girolami, G.4    Erikson, H.I.5
  • 13
    • 85042807979 scopus 로고    scopus 로고
    • Direct Evidence that Dislocations are Non-Radiative Recombnation Centers in GaN
    • Sygahara, T. et al. Direct Evidence that Dislocations are Non-Radiative Recombnation Centers in GaN. Jpn. J. Appl. Phys 37, L398-L400 (1998).
    • (1998) Jpn. J. Appl. Phys , vol.37
    • Sygahara, T.1
  • 14
    • 76449119852 scopus 로고    scopus 로고
    • Microstructures produced during the epitaxial growth of InGaN alloys
    • Stringfellow, G. B. Microstructures produced during the epitaxial growth of InGaN alloys. J. Cryst. Growth 312, 735-749 (2010).
    • (2010) J. Cryst. Growth , vol.312 , pp. 735-749
    • Stringfellow G., .B.1
  • 17
    • 9944225536 scopus 로고    scopus 로고
    • In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
    • Dadgar, A. et al. In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature. J. Cryst. Growth 272, 72-75 (2004).
    • (2004) J. Cryst. Growth , vol.272 , pp. 72-75
    • Dadgar, A.1
  • 18
    • 0342840996 scopus 로고
    • Thermal stress in GaN epitaxial layers grown on sapphre substrates
    • Kozawa, T. et al. Thermal stress in GaN epitaxial layers grown on sapphre substrates. J. Appl. Phys 77, 4389-4392 (1995).
    • (1995) J. Appl. Phys , vol.77 , pp. 4389-4392
    • Kozawa, T.1
  • 19
    • 0031588273 scopus 로고    scopus 로고
    • Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
    • Zheleva, T. S., Nam, O., Bremser, M. D. & Davis, R. F. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Appl. Phys. Lett 71, 2472-2474 (1997). (Pubitemid 127638861)
    • (1997) Applied Physics Letters , vol.71 , Issue.17 , pp. 2472-2474
    • Zheleva, T.S.1    Nam, O.-H.2    Bremser, M.D.3    Davis, R.F.4
  • 20
    • 0001466566 scopus 로고    scopus 로고
    • Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
    • Nam, O., Bremser, M. D., Zheleva, T. S. & Davis, R. F. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett 71, 2638-2240 (1997).
    • (1997) Appl. Phys. Lett , vol.71 , pp. 2638-2240
    • Nam, O.1    Bremser, M.D.2    Zheleva, T.S.3    Davis, R.F.4
  • 21
    • 0038040507 scopus 로고    scopus 로고
    • Nitride-based LEDs fabricated on patterned apphire substrates
    • Chang, S. J. et al. Nitride-based LEDs fabricated on patterned apphire substrates. Solid-State Electron 47, 1539-1542 (2003).
    • (2003) Solid-State Electron , vol.47 , pp. 1539-1542
    • Chang, S.J.1
  • 23
    • 1242309310 scopus 로고    scopus 로고
    • Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highl relaxed prous GaN
    • Fareed, R. S. Q., Adivarahan, V., Chen, C. Q., Rai, R. & Kuokstis, E. Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highl relaxed prous GaN. Appl. Phys. Lett 84, 696-698 (2004).
    • (2004) Appl. Phys. Lett , vol.84 , pp. 696-698
    • Fareed, R.S.Q.1    Adivarahan, V.2    Chen, C.Q.3    Rai, R.4    Kuokstis, E.5
  • 24
    • 65249116397 scopus 로고    scopus 로고
    • A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode
    • Chen, L.-C., Wang, C.-K., Jenn-Bin, Huang & Hong, L.-S. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode. Nanotechnology 20, 085303-085306 (2009).
    • (2009) Nanotechnology , vol.20 , pp. 085303-085306
    • Chen, L.-C.1    Wang, C.-K.2    Huang, J.3    Hong, L.-S.4
  • 25
    • 78751491623 scopus 로고    scopus 로고
    • Embedded voids approach for low defect density in epitaxial GaN films
    • Frajtag, P., El-Masry, N. A., Nepal, N. & Bedair, S. M. Embedded voids approach for low defect density in epitaxial GaN films. Appl. Phys. Lett 98, 023115-023117 (2011).
    • (2011) Appl. Phys. Lett , vol.98 , pp. 023115-023117
    • Frajtag, P.1    El-Masry, N.A.2    Nepal, N.3    Bedair, S.M.4
  • 26
    • 33751043849 scopus 로고    scopus 로고
    • Heteroepitaxial growth of high-quality GaN thin films on Si substrates coated with self-assembled sub-micrometer-sized silica balls
    • DOI 10.1002/adma.200601628
    • An, S. J., Hong, Y. J., Yi, G.-C., Kim, Y.-J. & Lee, D. K. Heteroepitaxial Growth of High-Quality GaN Thin Films on Si Substrates Coated with Self-Assembled Submicrometer- sized Silica Balls. Adv. Mater 18, 2833-2836 (2006). (Pubitemid 44759485)
    • (2006) Advanced Materials , vol.18 , Issue.21 , pp. 2833-2836
    • An, S.J.1    Hong, Y.J.2    Yi, G.-C.3    Kim, Y.-J.4    Lee, D.K.5
  • 27
    • 40849120116 scopus 로고    scopus 로고
    • High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
    • Ueda, K. et al. High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film. Appl. Phys. Lett 92, 101101-101103 (2008).
    • (2008) Appl. Phys. Lett , vol.92 , pp. 101101-101103
    • Ueda, K.1
  • 28
    • 67649099562 scopus 로고    scopus 로고
    • Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres
    • Li, Q., Figiel, J. J. & Wang, G. T. Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres. Appl. Phys. Lett 94, 231105-231107 (2009).
    • (2009) Appl. Phys. Lett , vol.94 , pp. 231105-231107
    • Li, Q.1    Figiel, J.J.2    Wang, G.T.3
  • 29
    • 84862062751 scopus 로고    scopus 로고
    • Improved emission efficiency of a-plane GaN light emitting diodes with silica nan-spheres integrated into a-plane GaN buffer layer
    • Park, S. H. et al. Improved emission efficiency of a-plane GaN light emitting diodes with silica nan-spheres integrated into a-plane GaN buffer layer. Appl. Phys. Lett 100, 191116-191119 (2012).
    • (2012) Appl. Phys. Lett , vol.100 , pp. 191116-191119
    • Park, S.H.1
  • 30
    • 77953562740 scopus 로고    scopus 로고
    • Selective defect blocking by self assembled silica nanospheres for high quality GaN template
    • Park, Y. J. et al. Selective defect blocking by self assembled silica nanospheres for high quality GaN template. Electrochem. Solid-State Lett 13, H287-H289 (2010).
    • (2010) Electrochem. Solid-State Lett , vol.13
    • Park, Y.J.1
  • 31
    • 79953041926 scopus 로고    scopus 로고
    • Self-assembled periodic silica nanosphere arrays on wet etched patterned sapphire substrate for a high-light-extraction-efficiency light-emittng diode
    • Han, N. et al. Self-assembled periodic silica nanosphere arrays on wet etched patterned sapphire substrate for a high-light-extraction-efficiency light-emittng diode. IEEE Electron Device Lett 32, 527-529 (2011).
    • (2011) IEEE Electron Device Lett , vol.32 , pp. 527-529
    • Han, N.1
  • 32
    • 80755126991 scopus 로고    scopus 로고
    • Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers
    • Park, Y. J. et al. Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers. Opt. Express 19, 23429-23435 (2011).
    • (2011) Opt. Express , vol.19 , pp. 23429-23435
    • Park, Y.J.1
  • 33
    • 79851481968 scopus 로고    scopus 로고
    • Effect of embedded silica nanospheres on improvng the performance of InGaN/GaN light-emitting diodes
    • Park, Y. J. et al. Effect of embedded silica nanospheres on improvng the performance of InGaN/GaN light-emitting diodes. Opt. Express 19, 2029-2036 (2011).
    • (2011) Opt. Express , vol.19 , pp. 2029-2036
    • Park, Y.J.1
  • 34
    • 23144464882 scopus 로고    scopus 로고
    • Silica nanorod-array films with very low refractive indices
    • DOI 10.1021/nl050698k
    • Xi, J. Q., Kim, J. K. & Schubert, E. F. Silica nanorod-Array Films with Very Low Refractive Indices. Nano Lett 5, 1385-1387 (2005). (Pubitemid 41084421)
    • (2005) Nano Letters , vol.5 , Issue.7 , pp. 1385-1387
    • Xi, J.-Q.1    Kim, J.K.2    Schubert, E.F.3
  • 35
    • 10944226772 scopus 로고    scopus 로고
    • Bending of dislocations in GaN during epitaxial lateral overgrowth
    • DOI 10.1063/1.1823593
    • Gradecak, S., Standelmann, P.,Wagner, V. & Ilegems, M. Bending of dislocations in GaN during epitaxial lateal overgrowth. Appl. Phys. Lett 85, 4648-4650 (2004). (Pubitemid 40009649)
    • (2004) Applied Physics Letters , vol.85 , Issue.20 , pp. 4648-4650
    • Gradecak, S.1    Stadelmann, P.2    Wagner, V.3    Ilegems, M.4
  • 36
    • 0000073841 scopus 로고
    • The tension of metallic films deposited by electrolysis
    • Stoney, G. The Tension of Metallic Films Deposited by Electrolysis. Proc. R. Soc. Lond. A 82, 172-175 (1909).
    • (1909) Proc. R. Soc. Lond. A , vol.82 , pp. 172-175
    • Stoney, G.1
  • 37
    • 0037098054 scopus 로고    scopus 로고
    • Modeling of elastic deformation of multilayers due to residual stresses and external bending
    • Hsueh, C.-H. Modeling of elastic deformation of multilayers due to residual stresses and external bending. J. Appl. Phys 91, 9652-9656 (2002).
    • (2002) J. Appl. Phys , vol.91 , pp. 9652-9656
    • Hsueh C., .-H.1
  • 40
    • 34247855129 scopus 로고    scopus 로고
    • Uniform illumination and rigorous electromagnetic simulations applied to CMOS image sensors
    • DOI 10.1364/OE.15.005494
    • Vaillant, J., Crocherie, A., Hirigoyen, F., Cadien, A. & Pond, J. Uniform illumination and rigorous electromagnetic simulations applied to CMOS image sensors. Opt. Express 15, 5494-5503 (2007). (Pubitemid 46698988)
    • (2007) Optics Express , vol.15 , Issue.9 , pp. 5494-5503
    • Vaillant, J.1    Crocherie, A.2    Hirigoyen, F.3    Cadien, A.4    Pond, J.5
  • 41
    • 73949124328 scopus 로고    scopus 로고
    • Soft-landing and optical characterization of a preselected single fluorescent particle on a tapered optical fiber
    • Gregor,M., Kuhlicke, A.&Benson, O. Soft-landing and optical characterization of a preselected single fluorescent particle on a tapered optical fiber. Opt. Express 17, 24234-24243 (2009).
    • (2009) Opt. Express , vol.17 , pp. 24234-24243
    • Gregor, M.1    Kuhlicke, A.2    Benson, O.3
  • 42
    • 0021376307 scopus 로고
    • ABAQUS/EPGEN - A General purpose finite element code with emphasis on nonlinear applications
    • DOI 10.1016/0029-5493(84)90106-7
    • Hibbitt, H. D. ABAQUS/EPGEN- A general purpose finite element code with emphasis on nonlinear applications. Nucl. Eng. Des 77, 271-297 (1984). (Pubitemid 14566187)
    • (1984) Nuclear Engineering and Design , vol.77 , Issue.3 , pp. 271-297
    • Hibbitt, H.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.