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Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

(5) Ramesh, V a,b Kikuchi, A a,b Kishino, K a,b Funato, M b,c Kawakami, Y b,c

a SOPHIA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BLUE SHIFT; DECAY TIME; EFFECT OF STRAIN; ETCHING DEPTH; HIGH-DENSITY; INDUCTIVELY COUPLED PLASMA DRY ETCHING; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LATTICE-MISMATCHED; MESA-STRIPE; MULTIPLE QUANTUM WELLS; NANOHOLE ARRAYS; NANOHOLES; NANOPILLAR; NANOPILLARS; NANOSTRIPES; NANOTEXTURING; NON-RADIATIVE RECOMBINATIONS; PHOTOLUMINESCENCE EMISSION; ROOM TEMPERATURE; STRAIN REDUCTION; STRAIN RELAXATION EFFECTS;

DRY ETCHING; ELECTROMAGNETIC INDUCTION; GALLIUM NITRIDE; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; OPTICAL PROPERTIES; PLASMA ETCHING; STRAIN CONTROL; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77953638679 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3369434 Document Type: Article

Times cited : (102)

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