Embedded voids approach for low defect density in epitaxial GaN films

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Frajtag, P ^a   El Masry, N A ^a   Nepal, N ^a,b   Bedair, S M ^a  

^a North Carolina State University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT REDUCTION; DISLOCATION DENSITIES; FREE SURFACES; GAN EPITAXIAL FILMS; GAN FILM; GAN/SAPPHIRE; HIGH DENSITY; LOW DEFECT DENSITIES; MICRO VOIDS; ORDERS OF MAGNITUDE; SAPPHIRE SUBSTRATES; TRANSMISSION ELECTRON; UNIFORM REDUCTION;

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DEFECT DENSITY; DEFECTS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 78751491623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3540680     Document Type: Article

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